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Microwave field-effect transistors : theory, design, and applications /
This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Atlanta :
Noble,
1994.
|
| Edición: | 3rd ed. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Pengelly, Raymond S. |q (Raymond Sydney), |d 1948- | |
| 245 | 1 | 0 | |a Microwave field-effect transistors : |b theory, design, and applications / |c by Raymond S. Pengelly. |
| 250 | |a 3rd ed. | ||
| 260 | |a Atlanta : |b Noble, |c 1994. | ||
| 300 | |a 1 online resource (xvi, 687 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. | ||
| 590 | |a Knovel |b ACADEMIC - Electronics & Semiconductors | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Metal semiconductor field-effect transistors. | |
| 650 | 6 | |a Arséniure de gallium. | |
| 650 | 6 | |a Transistors MESFET. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Microwaves. |2 bisacsh | |
| 650 | 7 | |a Gallium arsenide semiconductors. |2 fast |0 (OCoLC)fst00937276 | |
| 650 | 7 | |a Metal semiconductor field-effect transistors. |2 fast |0 (OCoLC)fst01017679 | |
| 650 | 7 | |a Galliumarsenid-MES-FET |2 gnd | |
| 650 | 7 | |a Mikrowellen-Halbleiterbauelement |2 gnd | |
| 650 | 7 | |a Feldeffekttransistor |2 gnd | |
| 655 | 7 | |a Mikrowellenfeldeffekttransistor. |2 swd | |
| 776 | 0 | 8 | |i Print version: |a Pengelly, Raymond S. (Raymond Sydney), 1948- |t Microwave field-effect transistors. |b 3rd ed. |d Atlanta : Noble, 1994 |z 1884932509 |w (DLC) 95051185 |w (OCoLC)33898672 |
| 856 | 4 | 0 | |u https://appknovel.uam.elogim.com/kn/resources/kpMFETTDA3/toc |z Texto completo |
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