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|a Kinch, Michael A.
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|a Fundamentals of infrared detector materials /
|c Michael A. Kinch.
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|a Bellingham, Wash. :
|b SPIE Press,
|c ©2007.
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|a 1 online resource (xi, 173 pages) :
|b illustrations
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|a text
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|a Tutorial texts series ;
|v v. TT76
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|a Includes bibliographical references (pages 165-168) and index.
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|a The choice of available infrared (IR) detectors for insertion into modern IR systems is both large and confusing. The purpose of this volume is to provide a technical database from which rational IR detector selection criteria evolve, and thus clarify the options open to the modern IR system designer. Emphasis concentrates mainly on high-performance IR systems operating in a tactical environment, although there also is discussion of both strategic environments and low- to medium-performance system requirements.
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|a Print version record.
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|a 1. Introduction. 2. IR detector performance criteria. 2.1. Photon detectors -- 2.2. Thermal detectors.
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|a 3. IR detector materials: a technology comparison. 3.1. Intrinsic direct bandgap semiconductor -- 3.2. Extrinsic semiconductor -- 3.3. Quantum well IR photodetectors (QWIPs) -- 3.4. Silicon schottky barrier detectors -- 3.5. High-temperature superconductor -- 3.6. Conclusions.
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|a 4. Intrinsic direct bandgap semiconductors. 4.1. Minority carrier lifetime -- 4.2. Diode dark current models -- 4.3. Binary compounds -- 4.4. Ternary alloys -- 4.5. Pb1-x SnxTe -- 4.6. Type III superlattices -- 4.7. Type II superlattices -- 4.8. Direct bandgap materials: conclusions.
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|a 5. HgCdTe: material of choice for tactical systems. 5.1. HgCdTe material properties -- 5.2. HgCdTe device architectures -- 5.3. ROIC requirements -- 5.4. Detector performance -- 5.5. HgCdTe: conclusions.
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|a 6. Uncooled detection. 6.1. Thermal detection -- 6.2. Photon detection -- 6.3. Uncooled photon vs. thermal detection limits -- 6.4. Uncooled detection: conclusions.
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|a 7. HgCdTe electron avalanche photodiodes (EAPDs). 7.1. McIntyre's avalanche photodiode model -- 7.2. Physics of HgCdTe EAPDs -- 7.3. Empirical model for electron avalanche gain in HgCdTe -- 7.4. Room-temperature HgCdTe APD performance -- 7.5. Monte Carlo modeling -- 7.6. Conclusions.
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|a 8. Future HgCdTe developments. 8.1. Dark current model -- 8.2. The separate absorption and detection diode structure -- 8.3. Multicolor and multispectral FPAs -- 8.4. High-density FPAs -- 8.5. Low background operation -- 8.6. Higher operating temperatures -- 8.7. Conclusion -- Epilogue -- Appendix A. Mathcad program for HgCdTe diode dark -- Current modeling -- References -- About the author -- Index.
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|a English.
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|a Knovel
|b ACADEMIC - Optics & Photonics
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|a Knovel
|b ACADEMIC - Aerospace & Radar Technology
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|a Infrared detectors
|x Materials.
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|a Détecteurs de rayonnement infrarouge
|x Matériaux.
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|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
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|a Infrared detectors
|x Materials
|2 fast
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|a Halbleiter
|2 gnd
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|a Infrarotdetektor
|2 gnd
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|i Print version:
|a Kinch, Michael A.
|t Fundamentals of infrared detector materials.
|d Bellingham, Wash. : SPIE Press, ©2007
|z 9780819467317
|w (DLC) 2007028531
|w (OCoLC)154678513
|
830 |
|
0 |
|a Tutorial texts in optical engineering ;
|v v. TT 76.
|
856 |
4 |
0 |
|u https://appknovel.uam.elogim.com/kn/resources/kpFIDM0001/toc
|z Texto completo
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