High-operating-temperature infrared photodetectors /

This book presents approaches, materials, and devices that eliminate the cooling requirements of IR photodetectors operating in the middle- and long-wavelength ranges of the IR spectrum. It is based mainly on the authors' experiences in developing and fabricating near room temperature HgCdTe de...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Piotrowski, Jozef, 1943-
Autor Corporativo: Society of Photo-Optical Instrumentation Engineers
Otros Autores: Rogalski, Antoni
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bellingham, Wash. : SPIE, 2007.
Colección:SPIE monograph ; PM169.
Temas:
Infrared detectors.
Optical detectors.
Détecteurs de rayonnement infrarouge.
Détecteurs optiques.
TECHNOLOGY & ENGINEERING > Technical & Manufacturing Industries & Trades.
Infrared detectors
Optical detectors
Detetores.
Materiais óticos.
Capteurs optiques.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Chap. 1. Introduction. 1.1. General remarks
  • 1.2. Detector figures of merit
  • 1.3. Detectivity requirements for thermal imagers
  • 1.4. Cooling of IR detectors
  • References.
  • Chap. 2. Fundamental performance limitations of infrared photodetectors. 2.1. Infrared photon detector classifications
  • 2.2. Theoretical model
  • 2.3. Optimum thickness of a detector
  • 2.4. Detector material figure of merit
  • 2.5. Reducing device volume to enhance performance
  • References.
  • Chap. 3. Materials used for intrinsic photodetectors. 3.1. Semiconductors for intrinsic photodetectors
  • 3.2. Hg1-xCdxTe ternary alloys
  • 3.3. Hg-based alternatives to HgCdTe
  • 3.4 InAs/Ga1-xInxSb Type II superlattices
  • 3.5 Novel Sb-based materials
  • 3.6 Lead salts
  • References.
  • Chap. 4. Intrinsic photodetectors
  • 4.1. Optical absorption
  • 4.2. Thermal generation-recombination processes
  • 4.4. Modeling of high-temperature photodetectors
  • References.
  • Chap. 5. Hg1xCdxTe photoconductors
  • 5.1. Simplified model of equilibrium mode photoconductors
  • 5.2. Excluded photoconductors
  • 5.3. Practical photoconductors
  • 5.4. SPRITE detectors
  • References.
  • Chap. 6. Hg1-xCdxTe photodiodes
  • 6.1. Theoretical design of Hg-1xCdxTe photodiodes
  • 6.2. Technology of Hg1-xCdxTe photodiodes
  • 6.3. Practical photodiodes
  • References.
  • Chap. 7. Photoelectromagnetic, magnetoconcentration, and Dember IR detectors
  • 7.1. PEM detectors
  • 7.2. Magnetoconcentration detectors
  • 7.3. Dember detectors
  • References.
  • Chap. 8. Lead salt photodetectors
  • 8.1. PbS and PbSe photoconductors
  • 8.2. Lead salt photovoltaic detectors
  • References.
  • Chap. 9. Alternative uncooled long-wavelength IR photodetectors
  • 9.1. HgZnTe and HgMnTe detectors
  • 9.2. III-V detectors
  • 9.3. InAs/Ga1-xInxSb type-II superlattice detectors
  • 9.4. Thermal detectors
  • References.
  • Chap. 10. Final remarks
  • 10.1. Summary of progress to date
  • 10.2. Directions for future development
  • References
  • Index.

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