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Properties, processing and applications of gallium nitride and related semiconductors /
Annotation
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
IEE : INSPEC,
©1999.
|
| Colección: | EMIS datareviews series ;
no. 23. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 037 | |b Knovel Corporation |n http://www.knovel.com | ||
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| 050 | 4 | |a TK7871.15.G33 |b P76 1999eb | |
| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 049 | |a UAMI | ||
| 245 | 0 | 0 | |a Properties, processing and applications of gallium nitride and related semiconductors / |c edited by James H. Edgar [and others]. |
| 260 | |a London : |b IEE : |b INSPEC, |c ©1999. | ||
| 300 | |a 1 online resource (xxiii, 656 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a EMIS datareviews series ; |v no. 23 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 520 | 8 | |a Annotation |b Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices. | |
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 590 | |a Knovel |b ACADEMIC - Electronics & Semiconductors | ||
| 650 | 0 | |a Gallium nitride. | |
| 650 | 0 | |a Light emitting diodes. | |
| 650 | 0 | |a Wide gap semiconductors. | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 6 | |a Nitrure de gallium. | |
| 650 | 6 | |a Diodes électroluminescentes. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 7 | |a Gallium nitride. |2 fast |0 (OCoLC)fst00937295 | |
| 650 | 7 | |a Light emitting diodes. |2 fast |0 (OCoLC)fst00998542 | |
| 650 | 7 | |a Semiconductors |x Materials. |2 fast |0 (OCoLC)fst01112237 | |
| 650 | 7 | |a Wide gap semiconductors. |2 fast |0 (OCoLC)fst01174923 | |
| 700 | 1 | |a Edgar, James H. | |
| 710 | 2 | |a INSPEC (Information service) | |
| 776 | 0 | 8 | |i Print version: |t Properties, processing and applications of gallium nitride and related semiconductors. |d London : IEE : INSPEC, ©1999 |z 0852969538 |w (OCoLC)41158852 |
| 830 | 0 | |a EMIS datareviews series ; |v no. 23. | |
| 856 | 4 | 0 | |u https://appknovel.uam.elogim.com/kn/resources/kpPPAGNRSL/toc |z Texto completo |
| 994 | |a 92 |b IZTAP | ||