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051014s1993 enka ob 001 0 eng c |
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|n http://www.knovel.com
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|a pcc
|a dlr
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|a QC611.8.C64
|b P77 1993b
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|a 621.3815/2
|2 20
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|a JK 67
|2 blsrissc
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|a UAMI
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| 245 |
0 |
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|a Properties of aluminium gallium arsenide /
|c edited by Sadao Adachi.
|
| 260 |
|
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|a London :
|b IEE, INSPEC,
|c ©1993.
|
| 300 |
|
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|a 1 online resource (xv, 325 pages) :
|b illustrations.
|
| 336 |
|
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|a text
|b txt
|2 rdacontent
|
| 337 |
|
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|a computer
|b c
|2 rdamedia
|
| 338 |
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|a online resource
|b cr
|2 rdacarrier
|
| 490 |
1 |
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|a EMIS datareviews series ;
|v no. 7
|
| 504 |
|
|
|a Includes bibliographical references and index.
|
| 505 |
0 |
0 |
|t Structural properties /
|r D. Cherns, T.S. Kuan, N.S. Takahashi --
|t Mechanical, elastic and lattice vibrational properties /
|r S. Adachi, W.D. Hunt, B. Jusserand --
|t Thermal properties /
|r S. Adachi, N.S. Takahashi --
|t Energy-band structure consequences /
|r S. Adachi [and others] --
|t Optical properties /
|r S. Adachi, W. Szuszkiewicz --
|t Electro-optic properties /
|r S. Adachi, C.C. Phillips, D.J. Robbins --
|t Carrier transport properties /
|r R.K. Ahrenkiel . [and others] --
|t Surfaces, interfaces and contacts /
|r H.L. Hartnagel [and others] --
|t Impurities and defect centres /
|r L. Dobaczewski [and others].
|
| 588 |
0 |
|
|a Print version record.
|
| 506 |
|
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|3 Use copy
|f Restrictions unspecified
|2 star
|5 MiAaHDL
|
| 533 |
|
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|a Electronic reproduction.
|b [S.l.] :
|c HathiTrust Digital Library,
|d 2010.
|5 MiAaHDL
|
| 538 |
|
|
|a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
|u http://purl.oclc.org/DLF/benchrepro0212
|5 MiAaHDL
|
| 583 |
1 |
|
|a digitized
|c 2010
|h HathiTrust Digital Library
|l committed to preserve
|2 pda
|5 MiAaHDL
|
| 546 |
|
|
|a English.
|
| 590 |
|
|
|a Knovel
|b ACADEMIC - Electronics & Semiconductors
|
| 650 |
|
0 |
|a Compound semiconductors.
|
| 650 |
|
0 |
|a Gallium arsenide semiconductors.
|
| 650 |
|
0 |
|a Aluminum alloys.
|
| 650 |
|
6 |
|a Composés semi-conducteurs.
|
| 650 |
|
6 |
|a Arséniure de gallium.
|
| 650 |
|
6 |
|a Aluminium
|x Alliages.
|
| 650 |
|
7 |
|a aluminum alloy.
|2 aat
|
| 650 |
|
7 |
|a Aluminum alloys
|2 fast
|
| 650 |
|
7 |
|a Compound semiconductors
|2 fast
|
| 650 |
|
7 |
|a Gallium arsenide semiconductors
|2 fast
|
| 650 |
|
7 |
|a Aluminiumarsenid
|2 gnd
|
| 650 |
|
7 |
|a Aluminiumverbindungen
|2 gnd
|
| 650 |
|
7 |
|a Aufsatzsammlung
|2 gnd
|
| 650 |
|
7 |
|a Galliumarsenid
|2 gnd
|
| 650 |
|
7 |
|a Mischkristall
|2 gnd
|
| 650 |
|
7 |
|a Physikalische Eigenschaft
|2 gnd
|
| 650 |
|
7 |
|a Physics.
|2 hilcc
|
| 650 |
|
7 |
|a Physical Sciences & Mathematics.
|2 hilcc
|
| 650 |
|
7 |
|a Electricity & Magnetism.
|2 hilcc
|
| 653 |
0 |
|
|a Semiconductors
|
| 700 |
1 |
|
|6 880-01
|a Adachi, Sadao,
|d 1950-
|
| 710 |
2 |
|
|a Institution of Electrical Engineers.
|
| 710 |
2 |
|
|a INSPEC (Information service)
|
| 776 |
0 |
8 |
|i Print version:
|t Properties of aluminium gallium arsenide.
|d London : IEE, INSPEC, ©1993
|w (DLC) 93218762
|w (OCoLC)27726562
|
| 830 |
|
0 |
|a EMIS datareviews series ;
|v no. 7.
|
| 856 |
4 |
0 |
|u https://appknovel.uam.elogim.com/kn/resources/kpPAGA0007/toc
|z Texto completo
|
| 880 |
1 |
|
|6 700-01/$1
|a 安達, 定雄,
|d (1950- )
|
| 994 |
|
|
|a 92
|b IZTAP
|
