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CMOS image sensors /

This book explores the operating principles of complementary metal oxide semiconductor (CMOS) image sensors, their architecture, readout circuits, and characterisation techniques.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Stefanov, Konstantin D. (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2022]
Colección:IOP (Series). Release 22.
IOP ebooks. 2022 collection.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • 1. The fundamentals
  • 1.1. Introduction--what is an image sensor and what does it do?
  • 1.2. Charge generation
  • 1.3. Charge collection
  • 1.4. Charge transfer
  • 1.5. Charge conversion
  • 1.6. pn junction
  • 1.7. MOS capacitor
  • 1.8. MOS transistor
  • 1.9. Source follower
  • 2. CMOS pixel architectures
  • 2.1. History and technology
  • 2.2. Photodiode APS
  • 2.3. Pinned photodiode (4T)
  • 2.4. Other PPD-based pixels
  • 2.5. Hybrid and 3D image sensors
  • 3. Advanced image sensor topics
  • 3.1. Photocurrent
  • 3.2. Dark current
  • 3.3. Reflective barrier
  • 3.4. Back-side illumination
  • 3.5. Depletion depth and potential gradients
  • 3.6. Punch-through
  • 3.7. Field-induced junctions
  • 4. Noise and readout techniques
  • 4.1. Noise in image sensors
  • 4.2. Correlated double sampling
  • 5. Characterisation
  • 5.1. Introduction
  • 5.2. Readout modes
  • 5.3. Principles of EO characterisation
  • 5.4. Photoresponse, non-uniformity and nonlinearity
  • 5.5. Photon transfer curve
  • 5.6. X-ray calibration
  • 5.7. Full well capacity and dynamic range
  • 5.8. Dark current and DSNU
  • 5.9. Noise measurement
  • 5.10. Image lag
  • 5.11. Quantum efficiency
  • 5.12. Electrical transfer function
  • 6. Electronics
  • 6.1. On-chip electronics
  • 6.2. Off-chip electronics.