Practical terahertz electronics. devices and applications / Volume 1, Solid-state devices and vacuum tubes :

This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Covering the fundamentals, operational principles, and theoretical aspects of the field, the book equips the reader to take the practical steps involved in th...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Khanna, Vinod Kumar, 1952- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2021]
Colección:IOP (Series). Release 21.
IOP ebooks. 2021 collection.
Temas:
Terahertz technology.
Submillimeter waves.
Solid state electronics.
Vacuum-tubes.
Electronic devices & materials.
Materials.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • part I. Solid-state electronic devices. 1. Terahertz electromagnetic waves
  • 1.1. What are terahertz waves?
  • 1.2. The electromagnetic waves
  • 1.3. Subdivisions of electromagnetic waves according to frequencies : the electromagnetic spectrum
  • 1.4. Location of terahertz gap in the international standard band designations
  • 1.5. Terahertz electronics
  • 1.6. The practical perspective of electronics
  • 1.7. Moving from conventional to terahertz electronics
  • 1.8. Peculiarities of the terahertz gap
  • 1.9. Unique advantages of terahertz gap frequencies
  • 1.10. Organizational plan of the book
  • 1.11. Discussion and conclusions
  • 2. Schottky barrier, metal-insulator-metal, self-switching and geometric diodes
  • 2.1. Schottky diode principle and switching action
  • 2.2. Current-voltage equation of a non-ideal Schottky-barrier diode (SBD)
  • 2.3. Components of the traditional equivalent circuit of a Schottky-barrier diode
  • 2.4. Cut-off frequency of the circular-contact SBD
  • 2.5. Consideration of skin effect for series resistance calculation
  • 2.6. Range of applicability of traditional SBD model
  • 2.7. Extended model of SBD
  • 2.8. Schottky diodes with terahertz operational frequencies
  • 2.9. Non-PN junction diodes
  • 2.10. Discussion and conclusions
  • 3. Resonant tunneling diodes
  • 3.1. Resonant tunneling diode working and high-frequency capability
  • 3.2. Simplest equivalent circuit model of resonant tunneling diode
  • 3.3. Maximum output power conveyed to the load resistor RL
  • 3.4. Small-signal transit-time equivalent circuit model of RTD
  • 3.5. Physics-based small-signal equivalent circuit model
  • 3.6. Terahertz resonant tunneling diodes
  • 3.7. Discussion and conclusions
  • 4. Avalanche transit-time and transferred-electron diodes
  • 4.1. Mechanisms of creation of negative resistance
  • 4.2. Frequency and power capabilities of IMPATT diode
  • 4.3. Diode structure and dynamic negative resistance behavior
  • 4.4. Terahertz GaAs IMPATT diodes
  • 4.5. Transferred-electron diode
  • 4.6. Physics of Gunn diode operation
  • 4.7. Terahertz planar Gunn diodes
  • 4.8. Discussion and conclusions
  • 5. Heterojunction bipolar transistors
  • 5.1. Capability of heterojunction bipolar transistor to work at high frequencies
  • 5.2. Gain definitions
  • 5.3. Frequency response of the common-emitter transistor amplifier
  • 5.4. Figures of merit (FOMs) for high-frequency bipolar transistors
  • 5.5. Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor
  • 5.6. DHBT IC technologies
  • 5.7. Discussion and conclusions
  • 6. Metal-oxide semiconductor field-effect transistors
  • 6.1. MOSFET construction and operation
  • 6.2. Short-circuit current gain
  • 6.3. MOSFET capacitances
  • 6.4. Cut-off frequency
  • 6.5. Circumventing the MOSFET speed limitations due to long electron transit time
  • 6.6. Terahertz MOSFET detectors
  • 6.7. Discussion and conclusions
  • 7. High-electron-mobility transistors
  • 7.1. MESFET and HEMT basics
  • 7.2. HEMT operation at high frequencies
  • 7.3. Built-in potential and capacitances
  • 7.4. Analysis of an HEMT structure
  • 7.5. InP terahertz HEMT technology
  • 7.6. Discussion and conclusions
  • part II. Vacuum electronic devices. 8. Travelling wave tubes and backward wave oscillators
  • 8.1. General constructional features of TWTs and BWOs
  • 8.2. Closer examination of working of TWT/BWO
  • 8.3. Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint
  • 8.4. Electron bunching and amplification of the signal in a TWT
  • 8.5. Applications of TWTs
  • 8.6. Terahertz TWTs
  • 8.7. Operation of the backward wave oscillator
  • 8.8. Advantages of the backward wave oscillator
  • 8.9. Limitations of the backward wave oscillator
  • 8.10. Frequency/power levels achieved with backward wave oscillators
  • 8.11. Discussion and conclusions
  • 9. Gyrotrons
  • 9.1. Difficulties faced with classical electron tubes in the terahertz range
  • 9.2. Periodic beam devices versus periodic circuit devices
  • 9.3. Advantages offered by gyrotron for terahertz generation
  • 9.4. Components and constructional details of gyrotron
  • 9.5. Cyclotron frequency
  • 9.6. Cyclotron resonance maser (CRM)
  • 9.7. Explanation of the bunching mechanism of a gyrotron with a simplified three-electron model
  • 9.8. Dispersion diagram of a gyrotron
  • 9.9. Gyrotron research status
  • 9.10. Discussion and conclusions
  • 10. Free electron lasers
  • 10.1. Free electron laser versus conventional laser
  • 10.2. Main components of a free electron laser
  • 10.3. Equation of motion of the electron in the undulator
  • 10.4. Operating modes of the free electron laser
  • 10.5. Discussion and conclusions.

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