Chemical vapour deposition : growth processes on an atomic level /

Chemical vapour deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance, solid materials. This is the first book to cover CVD growth processes at the atomic level using a combination of theoretical and experimental tools, including density functional theory (DFT...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Larsson, Karin, 1955- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2022]
Colección:IOP (Series). Release 22.
IOP ebooks. 2022 collection.
Temas:
Chemical vapor deposition.
Surface chemistry & adsorption.
TECHNOLOGY & ENGINEERING / Materials Science / Thin Films, Surfaces & Interfaces.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • 1. Introduction
  • 1.1. Chemical vapour phase deposition
  • 1.2. Overview of thin film characterization techniques
  • 1.3. Theoretical modelling and simulations
  • 2. Common CVD reactor setups
  • 2.1. General
  • 2.2. Classification of CVD reactors
  • 3. CVD processes on an atomic level
  • 3.1. Introduction
  • 3.2. Chemical reactions in the substrate/thin film interface
  • 3.3. Chemical reactions in the thin film/gas interface
  • 4. Theoretical methods and methodologies
  • 4.1. General
  • 4.2. The Schrödinger equation
  • 4.3. The density functional theory method
  • 4.4. Geometry optimizations
  • 4.5. Transition state search
  • 4.6. Process energies
  • 4.7. Property analysis methods
  • 5. Construction of solid surface models
  • 5.1. Surfaces within materials science of today
  • 5.2. Surface reactivities
  • 5.3. Surface planes
  • 5.4. Surface morphologies
  • 5.5. Surface relaxation
  • 5.6. Surface reconstruction
  • 5.7. Construction of model surfaces for CVD simulations
  • 6. Thermodynamic modelling of CVD growth processes
  • 6.1. General
  • 6.2. Stability of non-terminated surfaces
  • 6.3. Surface termination
  • 6.4. Creation of surface reactive sites
  • 6.5. Adsorption of growth species
  • 6.6. Identification of the rate-limiting step in the CVD growth of diamond
  • 6.7. Influence of dopants on the growth process
  • 7. Identification of growth mechanisms for ALD deposition of Cu
  • 7.1. General
  • 7.2. Test-calculations
  • 7.3. Adsorption of Cu-containing growth species
  • 7.4. Disproportionation of the copper(I)chloride molecule
  • 7.5. Removal of Cl from the CuCl adsorbate
  • 7.6. Reaction barriers
  • 8. Prerequisites for vapour phase growth of phase pure cubic BN
  • 8.1. Energetical vapour phase deposition
  • 8.2. Gentle chemical vapour phase deposition
  • 8.3. Termination of the c-BN surface
  • 8.4. Adsorption of growth species on the c-BN surface
  • 8.5. Surface migration during growth of c-BN
  • 9. Effect of substrates on the vapour phase growth of thin film materials
  • 9.1. Substrate effect on the vapour phase growth of c-BN
  • 9.2. Combined effect of substrate and terminating species on the vapour phase growth of c-BN
  • 9.3. Electron bond populations
  • 9.4. Degree of electron transfer
  • 9.5. Conclusions
  • 10. Construction of growth reaction pathways
  • 10.1. Simulation of an experimentally suggested c-BN growth mechanism
  • 11. Other types of material growth in a CVD reactor
  • 11.1. Diamond-to-graphene transformation.

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