Flexible electronics. Volume 2, Thin-film transistors /

Flexible electronics is a fast-emerging field with the potential for huge industrial importance. Comprising three volumes, this work offers a cohesive, coherent and comprehensive overview of the field. Themes covered include mechanical theory, materials science aspects, fabrication technologies, dev...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Khanna, Vinod Kumar, 1952- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2019]
Colección:IOP (Series). Release 6.
IOP expanding physics.
Temas:
Flexible electronics.
Thin film transistors.
Materials science.
TECHNOLOGY & ENGINEERING / Materials Science / Electronic Materials.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • 1. Amorphous Si TFT
  • 1.1. Thin-film transistor (TFT)
  • 1.2. TFT configurations and structures
  • 1.3. a-Si TFTs on polyimide foil substrates
  • 1.4. Effects of uniaxial and biaxial strain on TFTs
  • 1.5. TFTs on stainless steel foil substrates
  • 1.6. TFTs on clear plastic (CP) foil substrates
  • 1.7. Minimizing the shift in threshold voltage of TFT for reliable AMOLED operation
  • 1.8. Discussion and conclusions
  • 2. PolySi TFT
  • 2.1. Introduction
  • 2.2. PolySi TFT on PET
  • 2.3. PolySi TFT on PES
  • 2.4. PolySi TFT on PES or PAR
  • 2.5. PolySi TFT on plastic film by laminating on glass carrier
  • 2.6. Low-temperature <425 °C polySi TFT by SUFTLA
  • 2.7. TFTs on stainless steel foil
  • 2.8. Discussion and conclusions
  • 3. Single-crystal Si TFT
  • 3.1. Introduction
  • 3.2. Transferrable single-crystal silicon nanomembranes (NMs)
  • 3.3. SOI wafer process for Si NMs production, doping and transfer
  • 3.4. Microwave TFT fabrication using Si NMs
  • 3.5. TFTs on strained Si/SiGe/Si NMs
  • 4. Metal-oxide TFT
  • 4.1. Introduction
  • 4.2. IGZO TFT with ESL on PEN substrate
  • 4.3. IGZO TFT with cellulose fiber-based paper as substrate cum gate dielectric
  • 4.4. IGZO TFT fabrication process by sol-gel route
  • 4.5. IGZO TFT with organic gate dielectric/moisture barrier layers
  • 4.6. Transparent Ni-doped ZnO TFT
  • 4.7. TFT with PEALD ZnO layer
  • 4.8. Discussion and conclusions
  • 5. Small organic molecule TFT
  • 5.1. Introduction
  • 5.2. Pentacene TFT on PEN substrate
  • 5.3. Bending effects on pentacene TFT
  • 5.4. Pentacene and F16CuPc TFTs on PEN substrate for organic complementary circuit
  • 5.5. N-type small-molecule perylene diimide TFT
  • 5.6. DNTT TFTs and circuits
  • 5.7. DNTT TFT-based digital library
  • 5.8. Discussion and conclusions
  • 6. Polymer TFT
  • 6.1. Introduction
  • 6.2. P3HT TFT on polycarbonate substrate
  • 6.3. PTAA TFT on PET foil
  • 6.4. PDQT TFT array on PET substrate
  • 6.5. Ultrathin, disintegrable PDPP-PD polymer TFT and logic circuits on cellulose substrate
  • 6.6. FBT-TH4(1, 4) TFT on PEN substrate
  • 6.7. Discussion and conclusions
  • 7. Organic single-crystal TFT
  • 7.1. Introduction
  • 7.2. Rubrene single-crystal TFT
  • 7.3. BPEA single-crystal TFT
  • 7.4. Speedier process of building large arrays of organic single crystals
  • 7.5. CuPc and F16CuPc TFTs on 15 [mu]m diameter Au wire
  • 7.6. Discussion and conclusions
  • 8. Electrolyte-gated organic FET (EGOFET) and organic electrochemical FET (OECFET)
  • 8.1. Introduction
  • 8.2. Principle of electrolyte-gate organic FET (EGOFET)
  • 8.3. Organic electrochemical TFT (OECFET)
  • 8.4. EGOFET and OECFET with water as gate dielectric
  • 8.5. Polyelectrolyte-gated EGOTFTs of different architectures
  • 8.6. Vertical architecture OECFET
  • 8.7. Fiber-embedded EGOFET/OECFET for e-textiles
  • 8.8. Discussion and conclusions
  • 9. 2D-material TFT
  • 9.1. Introduction
  • 9.2. Graphene TFT on polyimide
  • 9.3. Graphene TFT on transparent PEN substrate
  • 9.4. Graphene TFT on flexible glass
  • 9.5. MoS2 TFT on Kapton (polyimide)
  • 9.6. WS2 TFT on solution-cast PI substrate
  • 9.7. WSe2 TFT on a PET substrate
  • 10. CNT FET
  • 10.1. Introduction
  • 10.2. High-mobility SWCNT TFT on spin-coated PI substrate
  • 10.3. Semiconductor-enriched CNT-based TFT on spin-coated PI substrate for active-matrix backplane
  • 10.4. CNT TFT with high current on-off ratio on a Kapton substrate
  • 10.5. Inkjet printed SWCNT TFT on PES substrate
  • 10.6. All-inkjet printed 5 GHz CNT TFT on Kapton polyimide film
  • 10.7. Gravure printed SWCNT-based TFT for D flip-flop, half-adder and full-adder on PET foil
  • 10.8. Inverse gravure-printed CNT TFT on a PET substrate with solution-deposited SWCNTs
  • 10.9. All-CNT TFT on PEN substrate using a photosensitive dry film
  • 10.10. Discussion and conclusions
  • 11. Nanowire FET
  • 11.1. Introduction
  • 11.2. Ge/Si NW FET on PI film
  • 11.3. P-type Si/SiO2 NW TFT on PEEK
  • 11.4. P-type Si/SiO2 NW TFT on Mylar
  • 11.5. TFT on a PET substrate by the SNAP NW transfer approach
  • 11.6. Discussion and conclusions.

Ejemplares similares