Lithium niobate-based heterostructures : synthesis, properties and electron phenomena /

With the use of ferroelectric materials in memory devices and the need for high speed integrated optics devices, the interest in ferroelectric thin films continues to grow. With their remarkable properties such as energy nonvolatility, fast switching, radiative stability, and unique optoacoustic and...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Sumets, Maxim (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2018]
Colección:IOP (Series). Release 5.
IOP expanding physics.
Temas:
Ferroelectric thin films.
Lithium niobate.
Heterostructures.
Integrated optics.
Optical physics.
SCIENCE / Physics / Optics & Light.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • 1. Thin films of lithium niobate : potential applications, synthesis methods, structure and properties
  • 1.1. The structure and main properties of bulk lithium niobate
  • 1.2. Application of thin LiNbO3 films
  • 1.3. Fabrication methods of thin LiNbO3 films
  • 1.4. Fundamentals of RFMS method, an ion-beam sputtering method and their critical parameters
  • 1.5. Electrical properties and charge transport phenomena in LiNbO3-based heterostructures
  • 2. Synthesis, structure and surface morphology of LiNbO3 films
  • 2.1. Technological regimes of the synthesis of thin LiNbO3 films by radiofrequency magnetron sputtering and ion-beam sputtering methods
  • 2.2. Composition, structure and surface morphology of LiNbO3 films
  • 2.3. Influence of the synthesis regimes and subsequent annealing on composition and structural properties of LiNbO3 films
  • 3. Electron phenomena in LiNbO3-based heterostructures
  • 3.1. Basic electrical properties of LiNbO3 thin films in Si-LiNbO3 heterosystems
  • 3.2. Conduction mechanisms in (001)Si-LiNbO3 heterostructures
  • 3.3. Band diagram of the Si-LiNbO3 heterostructures
  • 3.4. Impedance spectroscopy and ac conductivity of thin LiNbO3 films
  • 4. Effect of sputtering conditions and thermal annealing on electron phenomena in the Si-LiNbO3 heterostructures
  • 4.1. Effect of the spatial plasma inhomogeneity, composition and relative target-substrate position on electrical properties of Si-LiNbO3 heterostructures
  • 4.2. Thermal annealing effect on electrical properties of Si-LiNbO3 heterosystem
  • 4.3. Impedance spectroscopy of Si-LiNbO3-Al heterostructures after thermal annealing
  • 4.4. Optical band gap shift in thin LiNbO3 films depending on RFMS conditions and subsequent thermal annealing
  • 4.5. Temperature transition of p- to n-type conduction in the LiNbO3/Nb2O5 polycrystalline films fabricated in an Ar + O2 reactive gas environment
  • Appendix A. Cell parameters and powder x-ray diffraction data of LiNbO3 [1], LiNb3O8 [2], Li3NbO4 [3] and Nb2O5 [4].

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