Mott insulators : physics and applications /

There have been many recent developments in the physics and materials science of Mott insulators, especially their recognition as emergent materials for important and innovative device applications such as information processing and storage, and the possibilities of even further applications in opti...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Roy, Sindhunil Barman (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2019]
Colección:IOP (Series). Release 6.
IOP expanding physics.
Temas:
Hubbard model.
Electronic structure.
Metal-insulator transitions.
Electronic devices & materials.
TECHNOLOGY & ENGINEERING / Materials Science / Electronic Materials.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • part I. Physics of Mott insulators. 1 Electrons in crystalline solids
  • 1.1 Periodic structure of solids and Bragg scattering
  • 1.2 The direct lattice and the reciprocal lattice
  • 1.3 Metallic solid : a container of free electron gas
  • 1.4 Electron waves in the periodic ionic-potential of a solid : Bloch's theorem
  • 1.5 Independent electron approximation and electronic band structure
  • 1.6 Nearly free electron model versus tight binding model
  • 1.7 Quantum chemistry and electron theory of solids
  • 1.8 Methods for calculating electron band structure
  • 1.9 Metals, insulators and semiconductors
  • 1.10 Peierls transition and charge density wave
  • 1.11 Effects of static disorder : Anderson localization
  • 2 Electron-electron interaction in crystalline solids
  • 2.1 Electron-electron interaction in metals : Hartree-Fock theory
  • 2.2 Hartree-Fock theory of free electrons
  • 2.3 Exchange hole, correlation hole and pair distribution function
  • 2.4 Exchange energy and correlation energy in the electron gas
  • 2.5 Screening in the electron gas
  • 2.6 Hartree-Fock-Slater method and density functional theory
  • 2.7 Fermi liquid theory in metals
  • 2.8 Slater insulator
  • 3 Mott insulators and related phenomena : a basic introduction
  • 3.1 Localized framework of solid state
  • 3.2 Interacting electron gas : Wigner crystallization and Mott insulating state
  • 3.3 Mott insulator : towards a formal definition
  • 3.4 Pair distribution function and magnetic moments
  • 3.5 Mott-Hubbard insulator
  • 3.6 Theoretical approaches in Mott physics
  • 3.7 Mott-Heisenberg insulator
  • 3.8 Multi-band Mott insulator
  • 3.9 Charge transfer insulator
  • 3.10 Comparison between band-insulator, Mott-insulator and charge transfer insulator
  • 3.11 Mott-Anderson insulator
  • 3.12 Relativistic Mott insulator
  • 3.13 Excitonic insulator
  • 4 Mott physics and magnetic insulators
  • 4.1 Anderson superexchange and magnetic insulators
  • 4.2 Case studies of antiferromagnetic insulators : manganese monoxide and nickel monoxide
  • 4.3 Double exchange mechanism in mixed-valence systems La1-xSrxMnO3 and Fe3O4
  • 4.4 Nuclear fuel materials : uranium dioxide and plutonium
  • 4.5 Mott physics of molecular solid oxygen
  • 4.6 Interesting case of copper sulphate pentahydrate
  • 5 Mott metal-insulator transition
  • 5.1 Bandwidth-control and filling-control Mott transition
  • 5.2 Theoretical approaches in Mott metal-insulator transition
  • 6 Experimental studies on Mott metal-insulator transition
  • 6.1 Temperature induced and bandwidth control Mott metal-insulator transition
  • 6.2 Filling control Mott metal-insulator transition
  • 6.3 Systems with additional degrees of freedom beyond strong electron correlation
  • 6.4 VO2 and NbO2 : Peierls insulators or Mott insulators?
  • 6.5 Sr2IrO4 and Sr3Ru2O7 : Mott insulators or Slater insulators?
  • 6.6 Mott insulating state in semiconductor surfaces
  • part II. Applications of Mott insulators. 7 Electron band semiconductor devices
  • 7.1 Physics of intrinsic and extrinsic semiconductors
  • 7.2 Building blocks for semiconductor device
  • 7.3 A brief history of major semiconductor devices and technologies
  • 7.4 Single-junction semiconductor devices
  • 7.5 Bipolar transistor
  • 7.6 Metal-oxide-semiconductor field-effect transistor (MOSFET) and CMOS technology
  • 7.7 Beyond logic and memory : opto-electronic devices
  • 7.8 Scaling of MOSFET
  • 7.9 Limit of existing semiconductor technologies
  • 7.10 Beyond CMOS technology
  • 8 Mott insulator and strongly correlated electron materials based devices
  • 8.1 Mott metal-insulator transition : phase-coexistence and hysteresis
  • 8.2 Mott devices and mechanism of operation
  • 8.3 Theoretical models of resistive switching
  • 8.4 Experimental situation on Mott devices
  • Appendices. A. Some relevant experimental techniques
  • B. Fermi-Dirac distribution function
  • C. Idea of second quantization
  • D. Green's function and Hubbard model.

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