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Random telegraph signals in semiconductor devices /
Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
IOP Publishing,
[2016]
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| Colección: | IOP (Series). Release 3.
IOP expanding physics. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Preface
- 1. Introduction
- 2. Random telegraph signal phenomenology
- 2.1. RTS time constants
- 2.2. RTS amplitude behavior
- 2.3. RTS in the gate current of a MOS device
- 2.4. RTS in the junction leakage current of a MOSFET
- 2.5. Multiple and complex
- 3. RTS modeling, simulation and parameter extraction
- 3.1. Time constant modeling and simulation
- 3.2. Extraction trap position from RTS time constants
- 3.3. RTS amplitude modeling
- 3.4. Atomistic numerical modeling of the RTS amplitude
- 3.5. Novel measurement and analysis methods
- 3.6. Ab initio modeling of RTS in gate dielectrics
- 4. Impact device processing and scaling on RTS
- 4.1. Processing effects on RTS
- 4.2. RTS in fin-type architectures
- 4.3. Nanometric scaling aspects of RTS
- 4.4. RTS in {#x2018}beyond-silicon' devices
- 5. Operational and reliability aspects of RTS
- 5.1. Switching AC operation of RTS
- 5.2. Impact of uniform and HC degradation
- 5.3. BTI and RTS: oxide trapping?
- 5.4. Statistical RTS measurement methods
- 5.5. Device and circuit simulation of dynamic variability
- 6. RTS in memory and imager circuits
- 6.1. RTS in flash and SRAM cells
- 6.2. RTS in DRAM and logic circuits
- 6.3. RTS in novel ReRAM and PCMs
- 6.4. RTS in CMOS imagers and CCDs
- 7. General conclusions.