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Transport in semiconductor mesoscopic devices /
Modern electronics is being transformed as device size decreases to a size where the dimensions are significantly smaller than the constituent electron's mean free path. In such systems the electron motion is strongly confined resulting in dramatic changes of behaviour compared to the bulk. Thi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico Video |
| Idioma: | Inglés |
| Publicado: |
Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
IOP Publishing,
[2015]
|
| Colección: | IOP (Series). Release 2.
IOP expanding physics. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 024 | 7 | |a 10.1088/978-0-7503-1103-8 |2 doi | |
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| 035 | |a (OCoLC)919548128 | ||
| 040 | |a CaBNVSL |b eng |e rda |c CaBNVSL |d CaBNVSL | ||
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| 072 | 7 | |a TEC008090 |2 bisacsh | |
| 072 | 7 | |a TJFD |2 bicssc | |
| 082 | 0 | 4 | |a 537.6/22 |2 23 |
| 100 | 1 | |a Ferry, David K., |e author. | |
| 245 | 1 | 0 | |a Transport in semiconductor mesoscopic devices / |c David K. Ferry. |
| 264 | 1 | |a Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : |b IOP Publishing, |c [2015] | |
| 300 | |a 1 electronic document (various pagings) : |b illustrations (some color). | ||
| 336 | |a text |2 rdacontent | ||
| 336 | |a two-dimensional moving image |2 rdacontent | ||
| 337 | |a electronic |2 isbdmedia | ||
| 338 | |a online resource |2 rdacarrier | ||
| 490 | 1 | |a IOP expanding physics, |x 2053-2563 | |
| 490 | 1 | |a [IOP release 2] | |
| 500 | |a "Version: 20150801"--Title page verso. | ||
| 500 | |a EPUB version includes embedded videos. | ||
| 504 | |a Includes bibliographical references. | ||
| 505 | 8 | |a 10. Hot carriers in mesoscopic devices -- 10.1. Energy-loss rates -- 10.2. The energy-relaxation time. | |
| 505 | 8 | |a 9. Open quantum dots -- 9.1. Conductance fluctuations in open dots -- 9.2. Pointer states -- 9.3. Hybrid states -- 9.4. Imaging the pointer state scar | |
| 505 | 8 | |a 8. Tunnel devices -- 8.1. Coulomb blockade -- 8.2. Single-electron structures -- 8.3. Quantum dots and qubits -- 8.4. Resonant tunneling diodes -- Appendix H. Simple tunneling -- Appendix I. The Darwin-Fock spectrum | |
| 505 | 8 | |a 7. Spin -- 7.1. The spin Hall effect -- 7.2. Spin injection -- 7.3. Spin currents in nanowires -- 7.4. Spin relaxation -- Appendix F. Spin angular momentum -- Appendix G. The Bloch sphere | |
| 505 | 8 | |a 6. The quantum Hall effect -- 6.1. The Shubnikov-de Haas effect -- 6.2. The quantum Hall effect -- 6.3. The Büttiker-Landauer approach -- 6.4. The fractional quantum Hall effect | |
| 505 | 8 | |a 5. Localization and fluctuations -- 5.1. Localization of electronic states -- 5.2. Conductivity -- 5.3. Conductance fluctuations -- 5.4. Phase-breaking time | |
| 505 | 8 | |a 4. Carbon and other new materials -- 4.1. Graphene -- 4.2. Carbon nanotubes -- 4.3. Topological insulators -- 4.4. The chalcogenides -- Appendix E. Klein tunneling | |
| 505 | 8 | |a 3. The Aharonov-Bohm effect -- 3.1. Simple gauge theory of the AB effect -- 3.2. Temperature dependence of the AB effect -- 3.3. The AB effect in other structures -- 3.4. Gated AB rings -- 3.5. The electrostatic AB effect -- 3.6. The AAS effect -- 3.7. Weak localization -- Appendix D. The gauge in field theory | |
| 505 | 8 | |a 2. Wires and channels -- 2.1. The quantum point contact -- 2.2. The density of states -- 2.3. The Landauer formula -- 2.4. Temperature, scattering, and anomalies -- 2.5. Beyond the simple theory for the QPC -- 2.6. Landauer's contact resistance and scaled CMOS -- 2.7. Simulating the channel: the scattering matrix -- 2.8. Simulating the channel: the recursive Green's function -- Appendix A. Coupled quantum and Poisson problems -- Appendix B. The harmonic oscillator -- Appendix C. Discretizing the Schrödinger equation | |
| 505 | 0 | |a Preface -- Author biography -- 1. The world of nanoelectronics -- 1.1. Moore's law -- 1.2. Nanostructures -- 1.3. On the concept of localization -- 1.4. Some electronic time and length scales -- 1.5. Heterostructures for mesoscopic devices -- 1.6. Nanofabrication | |
| 520 | 3 | |a Modern electronics is being transformed as device size decreases to a size where the dimensions are significantly smaller than the constituent electron's mean free path. In such systems the electron motion is strongly confined resulting in dramatic changes of behaviour compared to the bulk. This book introduces the physics and applications of transport in such mesoscopic and nanoscale electronic systems and devices. The behaviour of these novel devices is influenced by numerous effects not seen in bulk semiconductors, such as the Aharonov-Bohm Effect, disorder and localization, energy quantization, electron wave interference, spin splitting, tunnelling and the quantum hall effect to name a few. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this book will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area. | |
| 521 | |a Graduate students and researchers in semiconductor physics and devices. | ||
| 530 | |a Also available in print. | ||
| 538 | |a System requirements: Adobe Acrobat Reader or EPUB reader. | ||
| 538 | |a Mode of access: World Wide Web. | ||
| 545 | |a David K. Ferry is Regents' Professor in the School of Electrical, Computer, and Energy Engineering, at Arizona State University. He received his doctoral degree from the University of Texas, Austin, and was the recipient of the 1999 Cledo Brunetti Award from the Institute of Electrical and Electronics Engineers for his contributions to nanoelectronics. He is the author, or co-author, of numerous scientific articles and more than a dozen books. | ||
| 588 | |a Title from PDF title page (viewed on September 1, 2015). | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Electronic devices & materials. |2 bicssc | |
| 650 | 0 | |a Mesoscopic phenomena (Physics) | |
| 650 | 0 | |a Nanostructures |x Electric properties. | |
| 650 | 0 | |a Nanostructured materials |x Electric properties. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Electron transport. | |
| 710 | 2 | |a Institute of Physics (Great Britain), |e publisher. | |
| 776 | 0 | 8 | |i Print version: |z 9780750311021 |
| 830 | 0 | |a IOP (Series). |p Release 2. | |
| 830 | 0 | |a IOP expanding physics. | |
| 856 | 4 | 0 | |u https://iopscience.uam.elogim.com/book/978-0-7503-1103-8 |z Texto completo |