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Schottky barriers : an overview /

"A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues assoc...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Redd, Saul T. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, [2020]
Colección:Materials science and technologies series.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 i 4500
001 EBSCO_on1200832878
003 OCoLC
005 20231017213018.0
006 m o d
007 cr |||||||||||
008 201007s2020 nyua ob 001 0 eng
010 |a  2020044969 
040 |a DLC  |b eng  |e rda  |c DLC  |d OCLCO  |d YDX  |d OCLCF  |d VRC  |d YDX  |d OCLCO  |d OCLCQ  |d OCLCO  |d N$T  |d OCLCQ 
020 |a 1536188182  |q (electronic book) 
020 |a 9781536188189  |q (electronic bk.) 
020 |z 9781536186819  |q (paperback) 
035 |a (OCoLC)1200832878 
042 |a pcc 
050 0 4 |a TK7872.C68  |b S36 2020 
082 0 0 |a 537.6/226  |2 23 
049 |a UAMI 
245 0 0 |a Schottky barriers :  |b an overview /  |c Saul T. Redd, editor. 
264 1 |a New York :  |b Nova Science Publishers,  |c [2020] 
300 |a 1 online resource (x, 193 pages) :  |b illustrations (some color) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Materials science and technologies 
504 |a Includes bibliographical references and index. 
520 |a "A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers. Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO. Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models. In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics"--  |c Provided by publisher 
588 0 |a Online resource; title from digital title page (viewed on February 15, 2021). 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Semiconductor-metal boundaries. 
650 0 |a Electric contacts. 
650 0 |a Heterojunctions. 
650 6 |a Contacts métal-semiconducteur. 
650 6 |a Contacts électriques. 
650 6 |a Hétérojonctions. 
650 7 |a Electric contacts.  |2 fast  |0 (OCoLC)fst00904606 
650 7 |a Heterojunctions.  |2 fast  |0 (OCoLC)fst00955751 
650 7 |a Semiconductor-metal boundaries.  |2 fast  |0 (OCoLC)fst01112197 
700 1 |a Redd, Saul T.,  |e editor. 
776 0 8 |i Print version:  |t Schottky barriers.  |d New York : Nova Science Publishers, 2021  |z 9781536186819  |w (DLC) 2020044968 
830 0 |a Materials science and technologies series. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2640321  |z Texto completo 
938 |a YBP Library Services  |b YANK  |n 301703991 
938 |a EBSCOhost  |b EBSC  |n 2640321 
994 |a 92  |b IZTAP