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EBSCO_on1200832878 |
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OCoLC |
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20231017213018.0 |
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201007s2020 nyua ob 001 0 eng |
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|a 2020044969
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|a DLC
|b eng
|e rda
|c DLC
|d OCLCO
|d YDX
|d OCLCF
|d VRC
|d YDX
|d OCLCO
|d OCLCQ
|d OCLCO
|d N$T
|d OCLCQ
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|a 1536188182
|q (electronic book)
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|a 9781536188189
|q (electronic bk.)
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|z 9781536186819
|q (paperback)
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|a (OCoLC)1200832878
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|a pcc
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|a TK7872.C68
|b S36 2020
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|a 537.6/226
|2 23
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|a UAMI
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245 |
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|a Schottky barriers :
|b an overview /
|c Saul T. Redd, editor.
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264 |
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|a New York :
|b Nova Science Publishers,
|c [2020]
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300 |
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|a 1 online resource (x, 193 pages) :
|b illustrations (some color)
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336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Materials science and technologies
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|a Includes bibliographical references and index.
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|a "A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers. Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO. Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models. In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics"--
|c Provided by publisher
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588 |
0 |
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|a Online resource; title from digital title page (viewed on February 15, 2021).
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590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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650 |
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|a Semiconductor-metal boundaries.
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650 |
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|a Electric contacts.
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650 |
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|a Heterojunctions.
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650 |
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6 |
|a Contacts métal-semiconducteur.
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650 |
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6 |
|a Contacts électriques.
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650 |
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6 |
|a Hétérojonctions.
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650 |
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7 |
|a Electric contacts.
|2 fast
|0 (OCoLC)fst00904606
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650 |
|
7 |
|a Heterojunctions.
|2 fast
|0 (OCoLC)fst00955751
|
650 |
|
7 |
|a Semiconductor-metal boundaries.
|2 fast
|0 (OCoLC)fst01112197
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700 |
1 |
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|a Redd, Saul T.,
|e editor.
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776 |
0 |
8 |
|i Print version:
|t Schottky barriers.
|d New York : Nova Science Publishers, 2021
|z 9781536186819
|w (DLC) 2020044968
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830 |
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0 |
|a Materials science and technologies series.
|
856 |
4 |
0 |
|u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2640321
|z Texto completo
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938 |
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|a YBP Library Services
|b YANK
|n 301703991
|
938 |
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|a EBSCOhost
|b EBSC
|n 2640321
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994 |
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|a 92
|b IZTAP
|