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An introduction to contact resistance /

"Contact resistance is both an old and new topic. It is old because fundamentals of the semiconductor-metal contacts were established in the 1930s even earlier than the study on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The new knowledge is on material and integration aspects...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Liu, Zuoguang (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, Inc., [2020]
Colección:Materials science and technologies series.
Temas:
Acceso en línea:Texto completo

MARC

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020 |a 9781536185836  |q (electronic book) 
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245 0 3 |a An introduction to contact resistance /  |c Zuoguang Liu, editor. 
264 1 |a New York :  |b Nova Science Publishers, Inc.,  |c [2020] 
300 |a 1 online resource (ix, 175 pages) :  |b color illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Materials science and technologies 
504 |a Includes bibliographical references and index. 
505 2 |a Introduction to semiconductor transistor resistances / Zuoguang Liu, PhD, Semiconductor Technology Research, IBM, Albany, NY, US -- Physics and materials of semiconductor-metal contacts / Zuoguang Liu, PhD, and Nicolas Breil, PhD, Semiconductor Technology Research, IBM, Albany, NY, US, and others -- Electrical characterization of contact resistance / Zuoguang Liu, PhD, Semiconductor Technology Research, IBM, Albany, NY, US, and others. 
520 |a "Contact resistance is both an old and new topic. It is old because fundamentals of the semiconductor-metal contacts were established in the 1930s even earlier than the study on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The new knowledge is on material and integration aspects for contact resistance reduction. As the MOSFETs become smaller and smaller, device parasitics start to dominate performance since the 2010s. The resistance part in MOSFET RC delay is mainly from external parasitics particularly the contact resistance. In the past decade, 3D MOSFETs, also named FinFETs, became the device structure in leading semiconductor technology. The 3D structure brings a unique opportunity for engineering the contact resistance. In physics, this book introduces MOSFET device electronics and contact physics. In material science, a variety of contact metals and silicides are covered. In electrical characterization, test structures and measurements of contact resistance are discussed in depth. In technology, state-of-the-art process techniques, material engineering, and integration for contact resistance reduction are introduced. This book can serve as a reference book for students in electrical engineering and material science major and professionals in semiconductor industry"--  |c Provided by publisher 
588 0 |a Online resource; title from digital title page (viewed on February 15, 2021). 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Semiconductor-metal boundaries. 
650 0 |a Electric contacts. 
650 0 |a Electric resistance. 
650 6 |a Contacts métal-semiconducteur. 
650 6 |a Contacts électriques. 
650 6 |a Résistance électrique. 
650 7 |a resistivity.  |2 aat 
650 7 |a Electric contacts  |2 fast 
650 7 |a Electric resistance  |2 fast 
650 7 |a Semiconductor-metal boundaries  |2 fast 
700 1 |a Liu, Zuoguang,  |e editor. 
776 0 8 |i Print version:  |t An introduction to contact resistance.  |d New York : Nova Science Publishers, Inc., [2020]  |z 9781536185010  |w (DLC) 2020038446 
830 0 |a Materials science and technologies series. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2579892  |z Texto completo 
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