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EBSCO_on1162277143 |
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110513s2012 nyu ob 001 0 eng |
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|a UAMI
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245 |
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|a Crystal growth :
|b theory, mechanisms, and morphology /
|c Nicole A. Mancuso and James P. Isaac, editors.
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|a New York :
|b Nova Publishers,
|c [2012]
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|a text
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|a Materials science and technologies
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|a Includes bibliographical references and index.
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|a Description based on print version record.
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|a English.
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|a CRYSTAL GROWTH ; CRYSTAL GROWTH ; Contents; Preface; Supersaturation: Formation, Measurement and Control; Abstract; I. Introduction; II. Varied Systems and the Ways to Generate Supersaturation in Them. (Methods and Apparatus for Crystallization); III. Systems in which Temperature Dependence of Solubility is Used to Attain Supersaturation; Preparation of High Purity Starting Material KB5; Growing of Single KB5 Crystals; IV. Method of Supersaturation Formation by Chemical Reaction.
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|a V. Methods of Indirect Measurement of Supersaturation by Using Various Concentration Dependent Solution ParametersInterferometric Technique; Density (Specific Gravity); Electrical Conductivity; Delta T Sensor and Surface Acoustic Wave; Potentiometric Method; Fluorescent Spectra; Formation and Measuring of Supersaturation by Pressure; Calculation in Case of AIIBVI Compounds (CdS); Prediction Mode; Recent Advances in the in-situ Measurement Technology and Automation, Using Raman Spectra and Antisolvent Addition Method; Conclusion; References.
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|a Self-Assembly of Epitaxial III/V-Compound Semiconductor Quantum DotsAbstract; 1. Introduction; 2. Strain-InducedInAsQDs; 2.1. MechanismofStrain-InducedQDFormation; 2.2. InAsQDOptoelectronicalProperties; 3. DropletEpitaxialGaAsQDs; 3.1. DensityandShapeofDropletEpitaxialQDs; 3.2. OpticalPropertiesofDropletEpitaxialQDs; 4. GaAsQDsFormedbyFillingofSelf-assembledNanoholes; 4.1. StructuralPropertiesofLDENanoholesandRings; 4.2. FabricationofQDsbyFillingofLDENanoholes; 5. Conclusions; Acknowledgments; References; Theory of Kinetic Experiment at Crystal Growth from Solutions in Melts; Abstract; Introduction.
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|a 1. Conception of a Kinetic Experiment2. Driving Force of Interphase Processes; 3. Thermomigration Process; 4. Mathematical Model of Non-stationary Thermomigration of Flat Interlayer; 5. Fast-Response Heating Systems. First Type of Nonstationarity; 5.1. Transient Process in a Layer of a Solution in a Melt: Change in Limiting Stage of Mass Transfer; 5.2. Small Temperature Oscillations Effect on the Characteristic Size Dependence of Migration Velocity; 5.3. Non-Stationary Thermomigration. The Characteristic Size Dependence of Migration Velocity in the Case of Non-Stationary Thermomigration.
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|a 6. Second Type of Nonstationarity. Slow-Response Heating System6.1. Temperature Change with Constant Rate. Lemma on Velocity of Middle Section of Liquid Layer; Statement; Proof; 6.2. The Characteristic Size Dependence of Migration Velocity in the Case of Slow Temperature Changes with Constant Rate; 7. Thermal Stationarity Criteria. Choice of Mass Transfer Mode for Kinetic Experiment; 8. Experimental Determination of Diffusive Velocity and Total Supersaturations; Conclusion; Referenses; Growth of InN and In-rich Group III-nitride Alloys in Cubic Phase; Abstract; I. Introduction.
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|a Mancuso, Nicole A.,
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|a Isaac, James P.,
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|d New York : Nova Science Publishers, c2012.
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