Parameter extraction and complex nonlinear transistor models /

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Kompa, Günter (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boston : Artech House, [2020]
Colección:Artech House microwave library.
Temas:
Microwave devices > Mathematical models.
Dispositifs à micro-ondes > Modèles mathématiques.
Technology, Engineering, Agriculture
Technologie, Ingenieurswissenschaft, Landwirtschaft
Technologie, ingénierie et agriculture
Electronics & communications engineering
Elektronik, Nachrichtentechnik
Ingénierie électronique et technologie des communications
Electronics engineering
Elektronik
Génie électronique
Microwave technology
Mikrowellentechnik
Technologie des micro-ondes
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Parameter Extraction and Complex Nonlinear Transistor Models
  • Contents
  • Preface
  • Chapter 1 Introduction
  • REFERENCES
  • Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT
  • 2.1 INTRODUCTION
  • 2.2 EVOLUTION OF FET DEVICES
  • 2.2.1 Field-Effect Transistors
  • 2.2.2 Heterojunction Bipolar Transistors
  • 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING
  • 2.3.1 MESFET
  • 2.3.2 HEMT
  • 2.3.3 HBT
  • 2.5 SUMMARY
  • REFERENCES
  • Chapter 3 Classification of Transistor Models
  • 3.1 INTRODUCTION
  • 3.2 PHYSICAL MODELS
  • 3.2.1 Numerical Physical Models
  • 3.2.2 Analytical Physical Models
  • 3.3 EMPIRICAL MODELS
  • 3.4 EXPERIMENTAL MODELS
  • 3.5 BEHAVIORAL MODELS
  • 3.5.1 ANN-Based Models
  • 3.5.2 X-Parameter-Based Models
  • 3.6 SUMMARY
  • REFERENCES
  • Chapter 4 Classical Shockley Model and Enhanced Modifications
  • 4.1 INTRODUCTION
  • 4.2 LONG-CHANNEL (SHOCKLEY) MODEL
  • 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS
  • 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION
  • 4.5 TWO-REGION MODEL
  • 4.6 SHORT-CHANNEL SATURATION MODEL
  • 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS
  • 4.7.1 Transconductance
  • 4.7.2 Gate-Source Capacitance
  • 4.7.3 MESFET and HEMT Transconductance Comparison
  • 4.8 PROBLEMS AND SOLUTIONS
  • 4.9 SUMMARY
  • REFERENCES
  • Chapter 5 Extrinsic Transistor Network at DC
  • 5.1 INTRODUCTION
  • 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING
  • 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES
  • 5.4 REGRIDDING ISSUES WITH MATLAB
  • 5.5 SUMMARY
  • REFERENCES
  • Chapter 6 Estimation of Model Element Values Based on Device Physical Data
  • 6.1 INTRODUCTION
  • 6.2 RESISTANCES
  • 6.2.1 Ohmic Contact Resistance
  • 6.2.2 Series Resistances
  • 6.2.3 Gate Resistance, Gate Inductance
  • 6.2.4 Gate Charging Resistance
  • 6.3 CONDUCTANCES
  • 6.3.1 Transconductance
  • 6.3.2 Channel Conductance
  • 6.4 CAPACITANCES
  • 6.4.1 Gate-Source Capacitance
  • 6.4.2 Gate-Drain Capacitance
  • 6.4.3 Drain-Source Capacitance
  • 6.5 DELAY TIME
  • 6.6 CONTACT AND INTERCONNECT STRUCTURES
  • 6.6.1 Device Contacting Pads
  • 6.6.2 Bondwire Inductance
  • 6.6.3 Via Hole Inductance
  • 6.6.4 Air Bridge
  • 6.6.5 Field Plate
  • 6.7 SUMMARY
  • REFERENCES
  • Chapter 7 Small-Signal Transistor Model Complexity
  • 7.1 INTRODUCTION
  • 7.2 SMALL-SIGNAL TRANSISTOR OPERATION
  • 7.2.1 Two-Port Y-Matrix Transistor Model
  • 7.2.2 Generic Extrinsic Transistor Pi-Model
  • 7.3 TRANSISTOR MODEL COMPLEXITY
  • 7.3.1 Small-Periphery Devices
  • 7.3.2 Large-Periphery Devices
  • 7.3.3 High-Resistivity Silicon Substrates
  • 7.4 SUMMARY
  • REFERENCES
  • Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements
  • 8.1 INTRODUCTION
  • 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS
  • 8.2.1 Generic Transconductance and Output Conductance
  • 8.2.2 Generic Capacitances
  • 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS
  • 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS

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