MARC

LEADER 00000cam a2200000 i 4500
001 EBSCO_on1140200295
003 OCoLC
005 20231017213018.0
006 m o d
007 cr cn|||||||||
008 200116s2020 maua ob 001 0 eng d
040 |a STF  |b eng  |e rda  |e pn  |c STF  |d CUV  |d YDX  |d UKAHL  |d OCLCF  |d EBLCP  |d N$T  |d VRC  |d OCLCO  |d IEEEE  |d VT2  |d OCLCQ  |d OCLCO  |d UPM  |d OCLCQ 
019 |a 1151196130  |a 1262682480  |a 1272923379 
020 |a 9781630817459  |q (electronic bk.) 
020 |a 1630817457  |q (electronic bk.) 
020 |z 9781630817442 
020 |z 1630817449 
029 1 |a AU@  |b 000069397344 
035 |a (OCoLC)1140200295  |z (OCoLC)1151196130  |z (OCoLC)1262682480  |z (OCoLC)1272923379 
050 4 |a TK7876 
082 0 4 |a 621.381/3  |2 23 
049 |a UAMI 
100 1 |a Kompa, Günter,  |e author. 
245 1 0 |a Parameter extraction and complex nonlinear transistor models /  |c Günter Kompa. 
264 1 |a Boston :  |b Artech House,  |c [2020] 
300 |a 1 online resource :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Artech House microwave library 
588 0 |a Online resource; title from PDF title page (viewed on March 09, 2020) 
504 |a Includes bibliographical references and index 
505 0 |a Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models 
505 8 |a 3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance 
505 8 |a 4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance 
505 8 |a 6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION 
505 8 |a 7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS 
505 8 |a 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Microwave devices  |x Mathematical models. 
650 6 |a Dispositifs à micro-ondes  |x Modèles mathématiques. 
650 7 |a Microwave devices  |x Mathematical models.  |2 fast  |0 (OCoLC)fst01020200 
653 |a Technology, Engineering, Agriculture 
653 |a Technologie, Ingenieurswissenschaft, Landwirtschaft 
653 |a Technologie, ingénierie et agriculture 
653 |a Electronics & communications engineering 
653 |a Elektronik, Nachrichtentechnik 
653 |a Ingénierie électronique et technologie des communications 
653 |a Electronics engineering 
653 |a Elektronik 
653 |a Génie électronique 
653 |a Microwave technology 
653 |a Mikrowellentechnik 
653 |a Technologie des micro-ondes 
776 0 8 |i Print version:  |a Kompa, Günter  |t Parameter Extraction and Complex Nonlinear Transistor Models  |d Norwood : Artech House,c2019  |z 9781630817442 
830 0 |a Artech House microwave library. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2450266  |z Texto completo 
938 |a Askews and Holts Library Services  |b ASKH  |n AH37370433 
938 |a ProQuest Ebook Central  |b EBLB  |n EBL6176645 
938 |a EBSCOhost  |b EBSC  |n 2450266 
938 |a IEEE  |b IEEE  |n 9098794 
938 |a YBP Library Services  |b YANK  |n 16736914 
994 |a 92  |b IZTAP