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Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China /
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Zurich, Switzerland :
Trans Tech Publications Ltd,
[2019]
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| Colección: | Materials science forum ;
v. 954. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Chapter 1: Growth, structure and property of wide bandgap semiconductors
- Effect of growth chamber structure on the growth of aluminum nitride crystals
- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC
- Effects of annealing parameters on epitaxial graphene on SiC substrates
- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene
- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers
- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates
- Progress in single crystal growth of wide bandgap semiconductor SiC
- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system
- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon
- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample
- Study of the growth temperature measurement and control for silicon carbide crystal
- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition
- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers
- Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices
- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers
- Recent progress of SiC MOSFET devices
- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation
- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions
- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing
- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices
- Effect of grinding-induced stress on interface state density of SiC/SiO2
- GaN Schottky barrier diodes with TiN electrode for microwave power transmission
- Research on threshold voltage instability in SiC MOSFET devices with precision measurement
- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS
- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET
- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge
- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions
- Simplified silicon carbide MOSFET model based on neural network
- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET
- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures
- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes
- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles
- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance
- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer
- Keyword index
- Author index.