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EBSCO_on1101898556 |
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OCoLC |
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20231017213018.0 |
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m o d |
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cr cnu|||unuuu |
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190520s2019 sz o 100 0 eng d |
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|a N$T
|b eng
|e rda
|e pn
|c N$T
|d N$T
|d OCLCF
|d YDXIT
|d UBY
|d OCLCQ
|d OCLCO
|d OCLCQ
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|a 9783035733853
|q (electronic book)
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|a 3035733856
|q (electronic book)
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|z 9783035713855
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|a AU@
|b 000065454630
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|a (OCoLC)1101898556
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|a TK7871.85
|b .A75 2018
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|a TEC
|x 009070
|2 bisacsh
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|a 621.38152
|2 23
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|a UAMI
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|a Asia-Pacific Conference on Silicon Carbide and Related Materials
|d (2018 :
|c Beijing, China)
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| 245 |
1 |
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|a Semiconductors :
|b silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China /
|c edited by Min Liu.
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| 264 |
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|a Zurich, Switzerland :
|b Trans Tech Publications Ltd,
|c [2019]
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| 300 |
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|a 1 online resource
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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|a Materials science forum ;
|v volume 954
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|a Online resource; title from digital title page (viewed on August 12, 2019).
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|a Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers
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| 505 |
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|a Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index.
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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| 650 |
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|a Semiconductors
|v Congresses.
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| 650 |
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6 |
|a Semi-conducteurs
|v Congrès.
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| 650 |
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|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
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| 650 |
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|a Semiconductors
|2 fast
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| 655 |
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|a Conference papers and proceedings
|2 fast
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| 700 |
1 |
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|a Lu, Min,
|e editor.
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| 830 |
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|a Materials science forum ;
|v v. 954.
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| 856 |
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|u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2138911
|z Texto completo
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| 938 |
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|a EBSCOhost
|b EBSC
|n 2138911
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|a 92
|b IZTAP
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