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The formation of structural imperfections in semiconductor silicon /
"Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor s...
| Clasificación: | Libro Electrónico |
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| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Newcastle upon Tyne, UK :
Cambridge Scholars Publishing,
2018.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation
- Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon
- Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation
- Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals
- Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing
- Chapter six. General approach to the engineering of defects in semiconductor silicon.