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Ultra clean processing of semiconductor surfaces XIV : 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018) held in Bruges, Belgium, September 22-24, 2008 /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Symposium on Ultra Clean Processing of Semiconductor Surfaces Leuven, Belgium
Otros Autores: Meuris, Marc, Heyns, Marc
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Stafa-Zuerich, Switzerland : Trans Tech Publications Ltd, [2018]
Temas:
Acceso en línea:Texto completo

MARC

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111 2 |a International Symposium on Ultra Clean Processing of Semiconductor Surfaces  |n (14th :  |d 2018 :  |c Leuven, Belgium),  |j author. 
245 1 0 |a Ultra clean processing of semiconductor surfaces XIV :  |b 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018) held in Bruges, Belgium, September 22-24, 2008 /  |c edited by Paul Mertens, Marc Meuris, Marc Heyns. 
264 1 |a Stafa-Zuerich, Switzerland :  |b Trans Tech Publications Ltd,  |c [2018] 
300 |a 1 online resource :  |b color illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and indexes. 
588 0 |a Online resource; title from PDF title page (EBSCO, viewed October 4, 2018). 
500 |a "Selected, peer reviewed papers from the 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018), September 3-5, 2018, Leuven, Belgium." 
505 0 |a Intro; Ultra Clean Processing of Semiconductor Surfaces XIV; Preface; Table of Contents; Chapter 1: Keynote Paper; Industry Context for Semiconductor Wet Etch and Surface Preparation; Chapter 2: Surface Cleaning and Surface Functionalization; Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography; Organic Material Removal by Thermally Activated Ozone Gas; Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber 
505 8 |a Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale BiofunctionalizationChapter 3: Surface Preparation of III-V Semiconductors; Toward the Surface Preparation of InGaAs for the Future CMOS Integration; Effect of WET treatment on Group III-V Compound Semiconductor Surface; Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry; Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent; Chapter 4: Mechanical Particle Removal 
505 8 |a Removal of CrN Contamination from EUV Mask Backside Using Dry CleaningDamage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology; An Observation Method of Real Contact Area during PVA Brush Scrubbing; Electrostatic Discharge Control and Visualization in Spray Nozzle; Chapter 5: Si and Ge Etching; Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process; Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions 
505 8 |a Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and MorphologyChapter 6: Selective SixGey Etching for Nanowire Release; Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs; SiGe vs. Si Selective Wet Etching for Si Gate-all-Around; A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks; Chapter 7: Gate-all-Around Gate Stack Processing; Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues 
505 8 |a Low Temperature SiGe Steam Oxide -- Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner SpacerRMG Patterning by Digital Wet Etching of Polycrystalline Metal Films; Chapter 8: Non-Semiconductor Film Etching; Wet Etchants Penetration through Photoresist during Wet Patterning; Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?; Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach; Chapter 9: Wetting Drying and Pattern Collapse; Drying Stability and Critical Height of Repeating Line/Space Structures 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Semiconductors  |x Surfaces  |v Congresses. 
650 6 |a Semi-conducteurs  |x Surfaces  |v Congrès. 
650 7 |a SCIENCE  |x Chemistry  |x Physical & Theoretical.  |2 bisacsh 
650 7 |a Semiconductors  |x Surfaces  |2 fast 
655 7 |a Conference papers and proceedings  |2 fast 
700 1 |a Meuris, Marc. 
700 1 |a Heyns, Marc. 
776 0 8 |i Print version:  |a International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th : 2018 : Leuven, Belgium) author.  |t Ultra clean processing of semiconductor surfaces XIV.  |d Stafa-Zuerich, Switzerland : Trans Tech Publications Ltd, [2018]  |z 3035714177  |z 9783035714173  |w (OCoLC)1050133342 
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