Cargando…
Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA /
This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Zurich, Switzerland :
Trans Tech Publications, Limited,
2018.
|
| Colección: | Materials science forum ;
v. 924. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Intro; Silicon Carbide and Related Materials 2017; Preface; Table of Contents; Chapter 1: Bulk and Epitaxial Growth; 1.1: Bulk Growth; SEMI Standards for SiC Wafers; Optimization of 150 mm 4H SiC Substrate Crystal Quality; Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method; Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals; Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process.
- The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC CrystalDevelopment of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique; Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si; Dislocation Behavior in Bulk Crystals Grown by TSSG Method; Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC; Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal.
- Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in SolventInfluence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC; Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method; 1.2: Epitaxial Growth; Status and Trends in Epitaxy and Defects; 99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD; Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor.
- Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall ReactorGrowth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer; High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool; Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor; Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor; Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition.
- Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary ReactorReduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool; Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC; CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode; Hot Filament CVD Growth of 4H-SiC Epitaxial Layers; Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films; Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed.