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Nano devices and sensors /
"The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Boston ; Berlin :
De Gruyter,
[2016]
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation
- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory
- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory
- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System
- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications
- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission
- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices
- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits
- Editors
- List of authors.