Cargando…

Advances in 3D integrated circuits and systems /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Yu, Hao (Electrical engineer) (Autor)
Otros Autores: Tan, Chuan Seng
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New Jersey : World Scientific, 2015.
Colección:Series on emerging technologies in circuits and systems ; vol. 1.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 i 4500
001 EBSCO_ocn922922497
003 OCoLC
005 20231017213018.0
006 m o d
007 cr |n|||||||||
008 151005s2015 nju ob 001 0 eng d
040 |a YDXCP  |b eng  |e rda  |e pn  |c YDXCP  |d N$T  |d OCLCO  |d IDEBK  |d XII  |d OCLCF  |d MYG  |d CDX  |d EBLCP  |d OCLCQ  |d DEBSZ  |d OCLCQ  |d AGLDB  |d OCLCQ  |d OCLCO  |d VTS  |d STF  |d M8D  |d UKAHL  |d OCLCQ  |d OCLCO  |d OCLCQ 
019 |a 941700320 
020 |a 9789814699020  |q (electronic bk.) 
020 |a 9814699020  |q (electronic bk.) 
020 |z 9789814699006  |q (hardback ;  |q alk. paper) 
020 |z 9814699004  |q (hardback ;  |q alk. paper) 
020 |z 9789814699013  |q (pbk. ;  |q alk. paper) 
020 |z 9814699012  |q (pbk. ;  |q alk. paper) 
029 1 |a DEBBG  |b BV043784895 
029 1 |a DEBSZ  |b 47287070X 
035 |a (OCoLC)922922497  |z (OCoLC)941700320 
050 4 |a TK7874.893  |b .Y83 2015 
072 7 |a TEC  |x 009070  |2 bisacsh 
082 0 4 |a 621.3815  |2 23 
049 |a UAMI 
100 1 |a Yu, Hao  |c (Electrical engineer),  |e author. 
245 1 0 |a Advances in 3D integrated circuits and systems /  |c by Hao Yu (NTU, Singapore), Chuan-Seng Tan (NTU, Singapore). 
264 1 |a New Jersey :  |b World Scientific,  |c 2015. 
264 4 |c ©2016 
300 |a 1 online resource 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Series on emerging technologies in circuits and systems 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Preface; 1. Introduction; 1.1 Thousand-core On-chip; 1.2 State-of-the-Art Many-core Microprocessors; 1.3 Memory-logic Integration; 1.3.1 2D Integration Challenges; 1.3.1.1 Scalability; 1.3.1.2 Channel Loss; 1.3.1.3 I/O Circuit Design; 1.3.1.4 Testing; 1.3.1.5 Thermal Management; 1.3.1.6 Power Management; 1.3.1.7 I/OManagement; 1.3.2 3D Integration; 1.3.3 2.5D Integration; 1.4 Organization of the Book; Part 1. Device Modeling; 2. Fabrication; 2.1 Introduction; 2.2 TSV Structure and Fabrication; 2.2.1 Structure Design; 2.2.1.1 Wafer Layout and Mask Design. 
505 8 |a 2.2.1.2 Electrical Structure Design2.2.1.3 Thermal Structure Design; 2.2.1.4 Dummy TSV Blocks; 2.2.2 Fabrication Process; 2.2.2.1 Electrical Structure Fabrication Process; 2.2.2.2 Thermal Structure Fabrication Process; 2.2.3 Process Control and Optimization; 2.2.3.1 DRIE Si Etch; 2.2.3.2 Dielectric Liner Deposition; 2.2.3.3 Ta Barrier/Cu Seed Layer Deposition and Cu ECP; 2.2.3.4 Cu CMP; 2.3 TSV Electrical Characterization; 2.3.1 Measurement Setup; 2.3.2 Conventional PETEOS Oxide Liner; 2.3.2.1 Electrical CV Measurement; 2.3.2.2 Electrical IV Measurement; 2.3.3 Black Diamond Low-k Liner. 
505 8 |a 2.3.3.1 Electrical CV Measurement2.3.3.2 Electrical IV Measurement; 2.3.4 Al2O3/Oxide Bi-layer Liner; 2.3.4.1 Electrical CV Measurement; 2.3.4.2 Electrical IV Measurement; 2.4 TSV Thermal Characterization Results; 2.4.1 Measurement Setup; 2.4.2 Cu-TSV Thermal Modeling; 2.4.3 Cu-TSV Induced Stress Modeling; 2.4.4 Cu-TSV Induced Stress Measurement by Micro-Raman Analysis; 2.5 TSI Structure and Fabrication; 2.5.1 Structure Design; 2.5.2 Fabrication Process; 2.6 Summary; 3. Device Model; 3.1 Introduction; 3.2 Nonlinear MOSCAP Model; 3.3 TSV Device Model; 3.3.1 Electrical Model. 
505 8 |a 3.3.2 Thermal Model3.3.3 Mechanical Model; 3.3.4 Delay Model; 3.3.4.1 Electrical-Thermal Coupled Delay Model; 3.3.4.2 Electrical-Mechanical Coupled Delay Model ; 3.3.4.3 Electrical-Thermal-Mechanical Coupled Delay Model; 3.3.5 Power Model; 3.4 TSI Device Model; 3.4.1 Delay Model; 3.4.1.1 T-line Model; 3.4.1.2 Delay of T-line; 3.4.2 Power Model; 3.4.2.1 TSV and TSI Comparison; 3.4.2.2 Energy-efficiency Analysis; 3.5 Summary; Part 2. Physical Design; 4. Macromodel; 4.1 Introduction; 4.2 Power and Thermal Integrity; 4.3 Macromodeling; 4.3.1 Complexity Compression. 
505 8 |a 4.3.1.1 Complexity Compression of States4.3.1.2 Complexity Compression of I/Os; 4.3.2 Parameterization; 4.4 Summary; 5. TSV Allocation; 5.1 Introduction; 5.2 Power Ground Design; 5.2.1 Problem Formulation; 5.2.2 Sensitivity based TSV Allocation; 5.3 Clock-treeDesign; 5.3.1 ProblemFormulation; 5.3.2 Sensitivity based TSV Allocation; 5.3.2.1 Reduction of Thermal Gradient; 5.3.2.2 Reduction of Stress Gradient; 5.3.2.3 Clock-skew Reduction; 5.4 Summary; 6. Testing; 6.1 Introduction; 6.2 3D IC Test; 6.2.1 System Architecture; 6.2.2 Problem Formulation. 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Three-dimensional integrated circuits. 
650 6 |a Circuits intégrés tridimensionnels. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Three-dimensional integrated circuits.  |2 fast  |0 (OCoLC)fst01765149 
700 1 |a Tan, Chuan Seng. 
776 0 8 |i Print version:  |z 9789814699006  |z 9814699004  |w (DLC) 2015020144  |w (OCoLC)910475568 
830 0 |a Series on emerging technologies in circuits and systems ;  |v vol. 1. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1077633  |z Texto completo 
938 |a Askews and Holts Library Services  |b ASKH  |n AH29503326 
938 |a Coutts Information Services  |b COUT  |n 32820329 
938 |a ProQuest Ebook Central  |b EBLB  |n EBL4394880 
938 |a EBSCOhost  |b EBSC  |n 1077633 
938 |a ProQuest MyiLibrary Digital eBook Collection  |b IDEB  |n cis32820329 
938 |a YBP Library Services  |b YANK  |n 12627829 
994 |a 92  |b IZTAP