Silicon carbide and related materials 2014 : selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France /

Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and C...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Grenoble, France
Otros Autores: Chaussende, Didier (Editor ), Ferro, Gabriel (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Switzerland : Trans Tech Publications, 2015.
Colección:Materials science forum ; v. 821-823.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
TECHNOLOGY & ENGINEERING > Mechanical.
TECHNOLOGY & ENGINEERING > Engineering (General)
TECHNOLOGY & ENGINEERING > Reference.
Silicon-carbide thin films.
Nitrides.
Graphene.
Crystal growth.
Silicon carbide.
Silicon carbide > Electric properties.
Conference papers and proceedings.
Acceso en línea:Texto completo

MARC

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245 1 0 |a Silicon carbide and related materials 2014 :  |b selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France /  |c edited by Didier Chaussende and Gabriel Ferro. 
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500 |a This conference provided an international scientific forum to 570 researchers and engineers from 29 countries ... -- Preface. 
588 0 |a Online resource; title from HTML table of contents page (Scientific.Net viewed July 15, 2015). 
520 |a Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II. 1 Fundamental and Material Properties; II. 2 Point and Extended Defects; II. 3 Surfaces and Interfaces; III. SiC Processing; III. 1 Doping, Implantation and Contact; III. 2 Dielectric Growth and Characterization; III. 3 Etching and Machining; IV. SiC Devices; IV. 1 Diodes; IV. 2 Field Effect Transistors; IV. 3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials Keyword: Silicon carbide, Wide bandgap semiconductor, Bulk growth, Epitaxial growth, Processing, Power electronics, MOS, characterization, graphene This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world. -- Carbon-- Engineering-- Materials science. 
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650 0 |a Silicon carbide  |v Congresses. 
650 0 |a Silicon carbide  |x Electric properties  |v Congresses. 
650 0 |a Silicon-carbide thin films  |v Congresses. 
650 0 |a Nitrides  |v Congresses. 
650 0 |a Graphene  |v Congresses. 
650 0 |a Crystal growth  |v Congresses. 
650 0 |a Wide gap semiconductors  |x Materials  |v Congresses. 
650 0 |a Wide gap semiconductors  |x Materials  |x Technological innovations  |v Congresses. 
650 6 |a Couches minces de carbure de silicium  |v Congrès. 
650 6 |a Nitrures  |v Congrès. 
650 6 |a Graphène  |v Congrès. 
650 6 |a Cristaux  |x Croissance  |v Congrès. 
650 6 |a Semi-conducteurs à large bande interdite  |x Matériaux  |v Congrès. 
650 6 |a Semi-conducteurs à large bande interdite  |x Matériaux  |x Innovations  |v Congrès. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Engineering (General)  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Reference.  |2 bisacsh 
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700 1 |a Chaussende, Didier,  |e editor. 
700 1 |a Ferro, Gabriel,  |e editor. 
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