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Heterosic & wasmpe 2013.
Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization; Chapter 3: Related Materials - Ga...
| Clasificación: | Libro Electrónico |
|---|---|
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
[Place of publication not identified] :
Trans Tech,
2015.
|
| Colección: | Materials science forum.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 505 | 0 | |a HeteroSiC & WASMPE 2013; Preface and Conference Committees; Table of Contents; Chapter 1: 3C-SiC -- Epitaxy, Characterization and Devices; 3C-SiC: New Interest for MEMS Devices; Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane; Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si; Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures; Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate; Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport. | |
| 505 | 8 | |a SiC NWs Grown on Silicon Substrate Using Fe as CatalystChapter 2: 4H-SiC and 15R-SiC -- Growth and Characterization; Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers; Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD; Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport; Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC; Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal. | |
| 505 | 8 | |a Chapter 3: Related Materials -- Gallium Nitride, Graphene and SiliconPotentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates; Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications; High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure; Synthesis and Characterization of (3-Aminopropyl)Triethoxysilane-Modified Epitaxial Graphene; Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces. | |
| 505 | 8 | |a Anti-Reflective Porous Silicon Features by Substrate Conformal Imprint Lithography for Silicon Photovoltaic ApplicationsChapter 4: SiC Devices and Device Processing; Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode; 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters; Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect; Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures. | |
| 505 | 8 | |a Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin OxidesProbing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3; The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors; Keywords Index; Authors Index. | |
| 520 | |a Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization; Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon; Chapter 4: SiC Devices and Device Processing. | ||
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