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Hafnium : chemical characteristics, production. and applications /
Hafnium is a chemical element with the symbol Hf and atomic number 72. This book brings together contributions from experts in their related fields to illustrate the significance and importance of hafnium in different forms. This book is composed of six chapters written by experts in their respectiv...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hauppauge, New York :
Nova Science Publishers, Inc.,
[2014]
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| Colección: | Chemistry research and applications series.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- HAFNIUM: CHEMICAL CHARACTERISTICS, PRODUCTION AND APPLICATIONS; HAFNIUM: CHEMICAL CHARACTERISTICS, PRODUCTION AND APPLICATIONS; Library of Congress Cataloging-in-Publication Data; CONTENTS; PREFACE; Chapter 1: A Review on Hafnium: Synthesis, Properties and Applications of Variety of Hafnium Compounds ; ABSTRACT; INTRODUCTION; PROPERTIES OF HAFNIUM; APPLICATIONS AND EFFECTS OF HAFNIUM; HAFNIUM COMPOUNDS; HAFNIUM COMPLEXES; HAFNIUM NANOCOMPOSITES; CONCLUSION; REFERENCES; Chapter 2: Mechanical Engineering of Hafnium with Metal Transition Multilayers; ABSTRACT; INTRODUCTION
- EXPERIMENTAL DETAILS OF MECHANICAL ENGINEERING OF HAFNIUM WITH METAL TRANSITION MULTILAYERSRESULTS AND DISCUSSION; ADHESION BEHAVIOR OF HAFNIUM WITH METAL TRANSITION MULTILAYERS; CONCLUSION OF HAFNIUM WITH METAL TRANSITION MULTILAYERS; ACKNOWLEDGMENTS; REFERENCES; Chapter 3: Hafnium Carbide Coating: Properties of Bulk, Surface and Metal/HfC Interfaces; ABSTRACT; INTRODUCTION; BULK PROPERTIES; ELECTRONIC PROPERTIES AND BONDING; PHYSICAL AND MECHANICAL PROPERTIES; HfC SURFACE PROPERTIES; METAL/HfC INTERFACES; CONCLUSION; REFERENCES
- Chapter 4: Stabilization of Higher Symmetry Hfo2 Polymorphs As Thin Films and NanoparticlesABSTRACT; INTRODUCTION; HfO2 COMPOUND; HfO2 THIN FILMS; HfO2 NANOPOWDER; CONCLUSION; PARTICIPANTS; ACKNOWLEDGMENTS; REFERENCES; Chapter 5: Hafnium-Based Thin Oxides: Versatile Insulators for Microelectronics ; ABSTRACT; INTRODUCTION; RESISTIVE SWITCHING IN HIGH-K THIN FILMS; NANOSCALE ELECTRICAL CHARACTERIZATION; NANOSCALE ELECTRICAL PROPERTIES HAFNIUM OXIDES; PHYSICAL ORIGIN OF RESISTIVE SWITCHINGIN HAFNIUM OXIDES; CONCLUSION; REFERENCES
- Chapter 6: Ultrathin Hafnium-Based High-K Dielectrics for High-K-Last/Gate-Last CMOS Integration Scheme ABSTRACT; INTRODUCTION; EXPERIMENTAL; PHYSICAL CHARACTERIZATION OF HFO2/SIO2/SI STACK; REMOTE SCAVENGING TECHNOLOGY USING A TI SCAVENGING LAYER AND A TIN BARRIER LAYER ON HFO2 DIELECTRIC; HIGH-K PERFORMANCE IMPROVEMENT THROUGH MULTI-DPOSITION-MULTI-ANNEALING(MDMA) TECHNIQUE; CONCLUSION; REFERENCES; Blank Page; INDEX