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Scanning transmission electron microscopy of nanomaterials : basics of imaging and analysis /
The basics, present status and future prospects of high-resolution scanning transmission electron microscopy (STEM) are described in the form of a textbook for advanced undergraduates and graduate students. This volume covers recent achievements in the field of STEM obtained with advanced technologi...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hackensack, NJ :
Imperial College Press,
2014.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Preface; Acknowledgments; Contents; List of Contributors; List of Abbreviations; List of Symbols; For Students and Beginners; Softwares for Simulation; Table of Values of Related Physical Constants; Table of Electron Wavelength; 1. Introduction; 1.1 Need for electron nanoprobe imaging; 1.2 Comparison of TEM, SEM, and STEM; 1.3 Advantages of STEM; 1.4 Application possibilities of STEM; 1.5 Brief introduction to the chapters in this book; References; 2. Historical Survey of the Development of STEM Instruments; 2.1 STEM from the 1930s to the 1960s; 2.2 Crewe's STEM.
- 2.3 Crewe's high-voltage STEM with aberration correction2.4 The STEMs of Strojnik, Le Poole, and Jouffrey; 2.5 Vacuum Generators' STEM; 2.6 Cowley's HB-5 STEM; 2.7 Hitachi STEM; 2.8 The Cavendish HB-5 STEM; 2.9 The Cornell STEM; 2.10 The Oak Ridge HB-501 STEM; 2.11 The IBM STEM; 2.12 Hitachi HD-2000 STEM; 2.13 Krivanek's aberration corrector; 2.14 The IBM and Oak Ridge HB-501 STEM with aberration corrector; 2.15 The Oak Ridge 300 kV STEM with aberration corrector; 2.16 The Daresbury STEM; 2.17 The 200 kV TEM-based STEM by JEOL and FEI; 2.18 The Oxford and Nagoya double-corrected STEM.
- 2.19 The 300 kV STEM at Jülich and Berkeley2.20 The Japanese aberration corrector for 200 kV STEM; 2.21 The advanced aberration-corrected TEM/STEM by JEOL; 2.22 The 300 kV TEM/STEM in the R005 project; 2.23 Hitachi aberration-corrected STEM; 2.24 The 200 kV dedicated STEM by NION; 2.25 The Japanese national project TEM/STEM for lower voltages; 2.26 High-voltage environmental STEM in Nagoya University; References; PART 1: BASIC KNOWLEDGE OF STEM; 3. Basics of STEM; 3.1 Basic knowledge of imaging by electrons; 3.2 Basic features of STEM imaging.
- 3.3 Fine electron probe formation in geometrical optics3.4 Wave optics for focusing by a convex lens and its wave aberration; 3.5 Basic design of STEM and its components; 3.6 Incoherent imaging in ADF-STEM; 3.6.1 Cowley's explanation; 3.6.2 Nellist's explanation; 3.7 Reciprocity between STEM and TEM; 3.8 Imaging modes of STEM; 3.9 Various kinds of image contrast in STEM and their theories; 3.9.1 Bright field contrast and lattice images with phase contrast; 3.9.2 Crewe's Z-contrast and its elemental mapping; 3.9.3 Pennycook's Z2-x contrast in ADF-STEM; 3.9.4 Depth-sectioning images in STEM.
- 3.9.5 ABF-STEM3.9.6 EELS and EDX elemental mapping in STEM; 3.9.7 Secondary electron imaging in STEM; 3.9.8 Scanning confocal electron microscopy (SCEM); 3.10 Prototypes of STEM; 3.11 Calculation of STEM image intensity; 3.11.1 Cowley-Moodie method; 3.11.1.1 Probe formation (Step 1); 3.11.1.2 Multislice calculation of dynamical diffraction of a probe in a crystal (Step 2); 3.11.1.3 Collection of diffraction intensity by detectors (Step 3); 3.11.1.4 Inclusion of inelastic scattering for STEM image intensity; 3.11.2 Bethe method.