|
|
|
|
LEADER |
00000cam a2200000 i 4500 |
001 |
EBSCO_ocn887240745 |
003 |
OCoLC |
005 |
20231017213018.0 |
006 |
m o d |
007 |
cr ||||||||||| |
008 |
140702t20142014nyua o 001 0 eng |
010 |
|
|
|a 2020685375
|
040 |
|
|
|a DLC
|b eng
|e rda
|e pn
|c DLC
|d E7B
|d YDXCP
|d OCLCF
|d ZCU
|d EBLCP
|d AGLDB
|d VTS
|d AU@
|d M8D
|d N$T
|d OCLCO
|d AJS
|d OCLCO
|d OCLCQ
|
019 |
|
|
|a 923676145
|a 928195812
|
020 |
|
|
|a 9781633215344
|q (ebook)
|
020 |
|
|
|a 1633215342
|
020 |
|
|
|z 1633214990
|q (hardcover)
|
020 |
|
|
|z 9781633214996
|q (hardcover)
|
029 |
1 |
|
|a AU@
|b 000054572669
|
029 |
1 |
|
|a AU@
|b 000062596076
|
029 |
1 |
|
|a DEBBG
|b BV043781927
|
029 |
1 |
|
|a DEBSZ
|b 450735400
|
035 |
|
|
|a (OCoLC)887240745
|z (OCoLC)923676145
|z (OCoLC)928195812
|
050 |
0 |
0 |
|a QD172.T6
|
072 |
|
7 |
|a TEC
|x 009070
|2 bisacsh
|
082 |
0 |
0 |
|a 621.381
|2 23
|
049 |
|
|
|a UAMI
|
245 |
0 |
0 |
|a Oxide electronics and functional properties of transition metal oxides /
|c editor, Alexander Pergament (Petrozavodsk State University, Russia).
|
264 |
|
1 |
|a New York :
|b Nova Publishers,
|c [2014]
|
264 |
|
4 |
|c ©2014
|
300 |
|
|
|a 1 online resource
|
336 |
|
|
|a text
|b txt
|2 rdacontent
|
337 |
|
|
|a computer
|b c
|2 rdamedia
|
338 |
|
|
|a online resource
|b cr
|2 rdacarrier
|
490 |
1 |
|
|a Chemistry research and applications
|
500 |
|
|
|a Includes index.
|
588 |
0 |
|
|a Print version record.
|
505 |
0 |
|
|a OXIDE ELECTRONICS AND FUNCTIONAL PROPERTIES OF TRANSITION METAL OXIDES; Contents; OXIDE ELECTRONICS AND FUNCTIONAL PROPERTIES OF TRANSITION METAL OXIDES; Library of Congress Cataloging-in-Publication Data; Oxide Electronics: An Introduction; Abstract; Acknowledgements; References; Chapter 1: Unipolar Resistive Switching Effect; Abstract; 1. Introduction: Resistive Switching in Oxide RERAM; 2. Unipolar Resistance Switching: Main Characteristics; 3. The Properties of Unipolar Resistive Switching; 3.1. Scaling Behavior; 3.2. The Temperature Dependence of Resistance.
|
505 |
8 |
|
|a 3.3. The Frequency Dependence of Resistance4. A Model of Unipolar Switching; 5. Flexible ReRAM Structures; Acknowledgments; References; Chapter 2: Some Fundamental Points of Technology of Lithium Niobate and Lithium Tantalate Single Crystals; I.V. Tananaev Institute of Chemistry and Technology of Rare Elements; and Mineral Raw Materials of Kola Science Centre of RAS, Apatity, Russia; Abstract; 1. Structural Features and Some Properties of; Lithium Niobate and Lithium Tantalate Crystals; 2. The Search for Homogeneity of LiNbO3 Crystals Grown of Charge with Different Genesis.
|
505 |
8 |
|
|a 3. Formation of a Stoichiometric Layer and New Polar Phase Upon Exposure of LiTaO3; Single Crystals to Lithium Vapor; 4. Vibrational Spectrum and Defect; Structure in Lithium Niobate Crystals; 5. Photorefractive and Raman Light Scattering; in Lithium Niobate Ferroelectric Single Crystal; 6. Effects of the Ordering of Structural Units; of the Cationic Sublattice of LiNbO3:Zn Crystals; and Their Manifestation in Raman Spectra; 7. Structural Ordering of Doped; Lithium Niobate Single Crystals; 8. Micro -- and Nanostructures; in Lithium Niobate Single Crystals; Doped with Lanthanides.
|
505 |
8 |
|
|a Doped with Y, Gd and Mg15. Curie Point Versus Concentration in Lithium; Niobate and Lithium Tantalate and the Positions; of Dopant Cations in the Structure; 16. Electrophysical and Spectroscopic Characteristics; of Lithium Niobate Single Crystals; 17. Dielectric and Spectral Characteristics; of Lithium Tantalate Polidomain Crystals; 18. Electrophysical and Structural Properties; of LiNbO3(RE(Single Crystals Grown under; Steady-State and Transient Conditions; References.
|
520 |
|
|
|a MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both.
|
590 |
|
|
|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
|
650 |
|
0 |
|a Transition metal oxides.
|
650 |
|
0 |
|a Oxides
|x Electric properties.
|
650 |
|
6 |
|a Oxydes de métaux de transition.
|
650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
|
650 |
|
7 |
|a Oxides
|x Electric properties.
|2 fast
|0 (OCoLC)fst01049573
|
650 |
|
7 |
|a Transition metal oxides.
|2 fast
|0 (OCoLC)fst01154779
|
700 |
1 |
|
|a Pergament, Alexander,
|e editor.
|
776 |
0 |
8 |
|i Print version:
|t Oxide electronics and functional properties of transition metal oxides.
|d New York : Nova Publishers, [2014]
|z 1633214990
|w (DLC) 2014026239
|
830 |
|
0 |
|a Chemistry research and applications series.
|
856 |
4 |
0 |
|u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=821893
|z Texto completo
|
938 |
|
|
|a ProQuest Ebook Central
|b EBLB
|n EBL2119909
|
938 |
|
|
|a ebrary
|b EBRY
|n ebr10904299
|
938 |
|
|
|a EBSCOhost
|b EBSC
|n 821893
|
938 |
|
|
|a YBP Library Services
|b YANK
|n 12015030
|
994 |
|
|
|a 92
|b IZTAP
|