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Thin film chemical vapor deposition in electronics : equipment, methodology, and thin film growth experience /
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Publishers,
[2014]
|
| Colección: | Materials science and technologies series.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- THIN FILM CHEMICAL VAPOR DEPOSITION IN ELECTRONICS: EQUIPMENT, METHODOLOGY AND THIN FILM GROWTH EXPERIENCE; THIN FILM CHEMICAL VAPOR DEPOSITION IN ELECTRONICS: EQUIPMENT, METHODOLOGY AND THIN FILM GROWTH EXPERIENCE; Library of Congress Cataloging-in-Publication Data; CONTENTS; PREFACE; LIST OF ABBREVIATIONS; LIST OF IMPORTANT SYMBOLS; PART 1. CVD EQUIPMENT, PROCESS AND THIN FILM METHODOLOGY; Chapter 1: BASIC THIN FILM MATERIALS IN INTEGRATED CIRCUIT TECHNOLOGY; 1.1. INTRODUCTORY REVIEW; 1.2. BASIC THIN FILM MATERIALS IN INTEGRATED CIRCUITS; 1.3. BRIEF REVIEW OF THE AUTHOR EXPERIENCE.
- 1.4. THE GOAL OF THE MONOGRAPHREFERENCES; Chapter 2: GENERAL THIN FILM CVD CHARACTERIZATION; 2.1. BASIC DEFINITIONS; 2.2. TYPES OF THIN FILM CVD REACTIONS; 2.3. CHEMICAL COMPOUNDS USED FOR THIN FILM CVD; 2.4. THERMODYNAMIC ASPECTS OF CVD THIN FILM GROWTH; 2.5. THIN FILM CVD GAS DYNAMIC REGIMES; 2.6. GENERAL KINETIC ASPECTS OF CVD THIN FILM GROWTH; 2.7. BASIC CVD THIN FILM GROWTH FUNCTIONAL DEPENDENCES; 2.8. THIN FILM CVD DEVELOPMENT PROBLEMATICS; REFERENCES; Chapter 3: BASIC FLOW CVD REACTOR DESIGNS AND PROCESS METHODOLOGY; 3.1. CVD TOOL STUCTURE; 3.2. CVD REACTOR DESIGN.
- 3.3. BASIC THIN FILM CVD PROCESS PARAMETERS3.4. BASIC THIN FILM CVD PROCESS METHODOLOGY; REFERENCES; Chapter 4: PULSED CVD TOOLS AND PROCESS METHODOLOGY; 4.1. INTRODUCTORY REMARKS; 4.2. PULSED CVD TOOL DESING; 4.3. PULSED CVD TOOL VACUUM SYSTEM CHARACTERISTICS; 4.4. PULSED CVD TOOL GAS SYSTEM CHARACTERISTICS; 4.5. ROLE OF MFC IN PULSED CVD PROCESSES; 4.5. CONSECUTIVE PULSED CVD PROCESS METHODOLOGY; 4.6. WAFER TEMPERATURE; CONCLUSION; REFERENCES; Chapter 5: BRIEF REVIEW ON CVD THIN FILM ANALYSIS TECHNIQUES; 5.1. INTRODUCTORY REVIEW; 5.2. FILM THICKNESS; 5.3. FILM COMPOSITION.
- 5.4. FILM PROPERTIES5.5. FILM ELECTRICAL PROPERTIES; REFERENCES; Chapter 6: METHODOLOGY OF THIN FILM CVD KINETIC STUDIES; 6.1. GENERAL CONSIDERATIONS; 6.2. PRACTICAL IMPLEMENTATION OF THIN FILM CVD KINETIC METHODOLOGY FOR CVD PROCESSES ANALYSIS; 6.3. RESEARCH METHODOLOGY FOR LPCVD PRODUCTUION PROCESSES; 6.4. EXPERIMENTAL METHODOLOGY FOR SINGLE VAFER CHAMBER CVD PROCESSES; REFERENCES; PART 2. EXAMPLES OF THIN FILM GROWTH KINETICS STUDIES; Chapter 7: SEMICONDUCTOR THIN FILM CVD: POLYSILICON; 7.1. INTRODUCTORY REMARKS; 7.2. BASIC DATA ON MONOSILANE PYROLISYS KINETICS.
- 7.3. POLYSILICON GRAIN SIZE FEATURES7.4. THIN POLYCRYSTALLINE FILMS GROWTH IN PRODUCTION BATCH LPCVD REACTORS; 7.5. BRIEF VIEW ON THE POLYCRYSTALLINE FILMS GROWTH SCHEMES AND MECHANISMS; 7.6. PLASMA-ENHANCED POLYSILICON DEPOSITION; REFERENCES; Chapter 8: DIELECTRIC THIN FILM CVD: SILICON NITRIDE; 8.1. INTRODUCTORY REMARKS; 8.2. MONOSILANE-AMMONIA SYSTEM; 8.3. SILICON TETRACHLORIDE-AMMONIA SYSTEM; 8.4. DICHLOROSILANE-AMMONIA SYSTEM; 8.5. BRIEF VIEW ON THE SILICON NITRIDE THIN FILM GROWTH SCHEMES AND MECHANISMS; 8.6. PRODUCTION PROCESSES OF SILICON NITRIDE THIN FILM DEPOSITION; REFERENCES.