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Frontiers in electronics : advanced modeling in nanoscale electron devices /
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
[2014]
|
| Colección: | Selected topics in electronics and systems ;
volume 54. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Frontiers in electronics : |b advanced modeling in nanoscale electron devices / |c editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway. |
| 264 | 1 | |a Singapore : |b World Scientific, |c [2014] | |
| 264 | 4 | |c ©2014 | |
| 300 | |a 1 online resource (204 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 490 | 1 | |a Selected topics in electronics and systems ; |v volume 54 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (ebrary, viewed March 20, 2014). | |
| 505 | 0 | |a PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX). | |
| 505 | 8 | |a 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model. | |
| 505 | 8 | |a 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques. | |
| 505 | 8 | |a 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs. | |
| 505 | 8 | |a 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs. | |
| 520 | |a This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 700 | 1 | |a Iñiguez, Benjamin, |e editor. | |
| 700 | 1 | |a Fjeldly, Tor A., |e editor. | |
| 776 | 0 | 8 | |i Print version: |a Iniguez, Benjamin. |t Frontiers in Electronics : Advanced Modeling of Nanoscale Electron Devices. |d Singapore : World Scientific Publishing Company, ©2014 |z 9789814583183 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v volume 54. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=704075 |z Texto completo |
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