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Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2011]
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| Colección: | Advanced materials research ;
276. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond
- Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
- Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS
- Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers
- Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index