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|a 621.38152
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|a UAMI
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|a Defects and diffusion in semiconductors XIII /
|c edited by D.J. Fisher.
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|a Durnten-Zurich :
|b Trans Tech Publications Ltd,
|c [2011]
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|c ©2011
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300 |
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|a 1 online resource (172 pages) :
|b illustrations
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
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|a Defect and diffusion forum,
|x 1662-9507 ;
|v volume 318
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|a Includes bibliographical references and index.
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|a Online resource; title from PDF title page (ebrary, viewed November 4, 2013).
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|a This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: "Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide" (D. Vaya, A. Jain, S. Lodha, V.K. Sharma, S.C. Ameta), "Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles" (M. Ragam, N. Sankar, K. Ramachandran), "The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl" (L. Chen, Z. Qiu), "Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow" (D.P. Adhikary, A.H. Wilkins), "Theoretical Investigations of the Defect Structure for Ni3+ in ZnO" (Z.H. Zhang, S.Y. Wu, S.X. Zhang)
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|a Defects and Diffusion in Semiconductors XIII; Table of Contents; Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide; Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles; The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl; Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow; Theoretical Investigations of the Defect Structure for Ni3+ in ZnO; Abstracts; Keywords Index; Authors Index.
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546 |
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|a English.
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590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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650 |
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|a Semiconductors
|x Defects.
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650 |
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|a Diffusion.
|
650 |
|
6 |
|a Semi-conducteurs
|x Défauts.
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650 |
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|a Diffusion (Physique)
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650 |
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|a diffusion.
|2 aat
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|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
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|a Diffusion
|2 fast
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650 |
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|a Semiconductors
|x Defects
|2 fast
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700 |
1 |
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|a Fisher, D. J.,
|e editor.
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776 |
0 |
8 |
|i Print version:
|a Fisher, D.J.
|t Defects and Diffusion in Semiconductors XIII : An Annual Retrospective XIII.
|d Zurich : Trans Tech Publishers, ©2011
|z 9783037852200
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830 |
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|a Diffusion and defect data.
|n Pt. A,
|p Defect and diffusion forum ;
|v v. 318.
|
856 |
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