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Layered structure effects as realisation of anizotropy in magnetic, galvanomagnetic and thermoelectric phenomena /
Many materials used in devices intended for converting the energy or information in its crystal structure belong to the layered ones. These materials include transition metal dichalcogenides, intercalated graphite compounds, semiconductors with superlattice, synthetic metals based on organic compoun...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Science Publishers,
[2014]
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| Colección: | Physics research and technology.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- LAYERED STRUCTURE EFFECTS AS REALISATION OF ANIZOTROPY IN MAGNETIC, GALVANOMAGNETIC AND THERMOELECTRIC PHENOMENA; LAYERED STRUCTURE EFFECTS AS REALISATION OF ANIZOTROPY IN MAGNETIC, GALVANOMAGNETIC AND THERMOELECTRIC PHENOMENA; Library of Congress Cataloging-in-Publication Data; CONTENTS; PREFACE; Chapter 1: INTRODUCTION; Chapter 2: ENERGY SPECTRUM OF CHARGE CARRIERS IN A LAYERED CRYSTAL AND THIN FILM ON ITS BASIS IN A QUANTIZING MAGNETIC FIELD.
- Chapter 3: ELECTRON DENSITY OF STATES AND STATISTIC PROPERTIES OF ELECTRON GAS IN LAYERED CRYSTALS AND THIN FILMS ON THEIR BASIS IN THE ABSENCE OF A MAGNETIC FIELDChapter 4: DENSITY OF STATES AND STATISTICAL PROPERTIES OF ELECTRON GAS IN LAYERED CRYSTALS IN THE PRESENCE OF INTERLAYER CHARGE ORDERING; Chapter 5: STATISTICAL PROPERTIES OF ELECTRON GAS IN LAYERED CRYSTALS AND THIN FILMS ON THEIR BASIS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD UNDER STRONG DEGENERACY CONDITIONS.
- Chapter 6: STATISTICAL PROPERTIES OF ELECTRON GAS IN LAYERED CRYSTALS AND THIN FILMS ON THEIR BASIS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD UNDER WEAK AND INTERMEDIATE DEGENERACY CONDITIONSChapter 7: STATISTICAL PROPERTIES OF ELECTRON GAS IN LAYERED CHARGE-ORDERED CRYSTALS IN A QUANTIZING MAGNETIC FIELD UNDER STRONG DEGENERACY CONDITIONS; Chapter 8: STATISTICAL PROPERTIES OF ELECTRON GAS INLAYERED CHARGE-ORDERED CRYSTALS IN AQUANTIZING MAGNETIC FIELD UNDER WEAK ANDINTERMEDIATE DEGENERACY CONDITIONS.
- Chapter 9: GENERAL FORMULAE FOR THE DIAMAGNETICSUSCEPTIBILITY OF ELECTRON GAS IN LAYEREDCRYSTALS AND THIN FILMS ON THEIR BASISChapter 10: LANDAU DIAMAGNETISM AND TOTAL MAGNETICSUSCEPTIBILITY OF ELECTRON GAS IN LAYEREDCRYSTALS AND THIN FILMS ON THEIR BASIS IN AWEAK MAGNETIC FIELD; Chapter 11: DIAMAGNETIC SUSCEPTIBILITY OF CHARGEORDEREDLAYERED CRYSTALS IN A WEAKMAGNETIC FIELD; Chapter 12: DE HAAS-VAN ALPHEN DIAMAGNETISM IN LAYEREDCRYSTALS AND THIN FILMS ON THEIR BASIS; Chapter 13: DE HAAS-VAN ALPHEN DIAMAGNETISM IN CHARGEORDEREDLAYERED CRYSTALS.
- Chapter 14: LANGEVIN DIAMAGNETISM IN LAYERED CRYSTALSAND THIN FILMS ON THEIR BASISChapter 15: LANGEVIN DIAMAGNETISM INCHARGE-ORDERED LAYERED CRYSTALS; Chapter 16: GENERAL FORMULAE FOR A LONGITUDINALELECTRIC CONDUCTIVITY OF A LAYERED CRYSTALIN A STRONG QUANTIZING MAGNETIC FIELD ANDGENERAL CONDITIONS FOR THE ORIGINATION OFLONGITUDINAL GALVANOMAGNETIC EFFECTS; Chapter 17: LONGITUDINAL ELECTRIC CONDUCTIVITY OFLAYERED CRYSTALS IN A QUANTIZING MAGNETICFIELD UNDER STRONG DEGENERACY CONDITIONSAND IN THE APPROXIMATION OF CONSTANTRELAXATION TIME.