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Design and modeling for 3D ICs and interposers /

3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the silicon via (TSV) and glass via (TGV) technology,...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Swaminathan, Madhavan (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Hackensack, NJ : World Scientific, 2014.
Colección:WSPC series in advanced integration and packaging ; 2.
Temas:
Acceso en línea:Texto completo

MARC

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245 1 0 |a Design and modeling for 3D ICs and interposers /  |c by Madhavan Swaminathan, Ki Jin Han. 
264 1 |a Hackensack, NJ :  |b World Scientific,  |c 2014. 
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490 1 |a WSPC series in advanced integration and packaging ;  |v 2 
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505 0 |a Ch. 1. System integration and modeling concepts. 1.1. Moore's law. 1.2. IC integration vs system integration -- what is the difference? 1.3. History of integration -- an overview. 1.4. Primary drivers for 3D integration. 1.5. Role of the interposer in 3D integration. 1.6. Modeling and simulation. 1.7. Summary -- ch. 2. Modeling of cylindrical interconnections. 2.1. Introduction. 2.2. Specialized basis functions. 2.3. Electric field integral equation (EFIE) with cylindrical CMBF for resistance and inductance extraction. 2.4. Scalar potential integral equation (SPIE) with cylindrical AMBF for conductance and capacitance extraction. 2.5. Broadband equivalent RLC network. 2.6. Inclusion of planar structures. 2.7. Examples with bonding wires. 2.8. Examples with vias. 2.9. Example of package on package. 2.10. Summary -- ch. 3. Electrical modeling of through silicon vias. 3.1. Benefits of through silicon vias. 3.2. Challenges in modeling through silicon vias. 3.3. Propagating modes in through silicon vias -- an electromagnetic perspective. 3.4. Physics based modeling of through silicon vias. 3.5. Rigorous electromagnetic modeling. 3.6. Modeling of conical through silicon via. 3.7. MOS capacitance effect. 3.8. Consideration of MOS capacitance effect in electromagnetic modeling. 3.9. Time domain response. 3.10. Summary -- ch. 4. Electrical performance and signal integrity. 4.1. Process optimization. 4.2. Cross talk in interposers. 4.3. Via arrays. 4.4. Interposers. 4.5. Modeling and design challenges. 4.6. Summary -- ch. 5. Power distribution, return path discontinuities and thermal management. 5.1. Power distribution -- an overview. 5.2. Power distribution for 3D integration. 5.3. Current paths in IC and package. 5.4. Signal and power integrity -- does one affect the other? 5.5. Challenges for addressing power distribution in 3D ICs and interposers. 5.6. Thermal management and its effect on power distribution. 5.7. Summary -- ch. 6. Alternate methods for power distribution. 6.1. Introducing power transmission lines. 6.2. Constant current power transmission line (CCPTL). 6.3. Pseudo balanced power transmission line (PBPTL). 6.4. Constant voltage power transmission line (CVPTL). 6.5. Power calculations. 6.6. Application of power transmission lines to FPGA. 6.7. Managing signal and power integrity for 3D ICs. 6.8. Summary. 
520 |a 3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the silicon via (TSV) and glass via (TGV) technology, the book introduces 3D ICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution. 
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