Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commerc...
Clasificación: | Libro Electrónico |
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Autor Corporativo: | |
Otros Autores: | , , , |
Formato: | Electrónico Congresos, conferencias eBook |
Idioma: | Inglés |
Publicado: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2013]
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Colección: | Materials science forum ;
v. 740-742. |
Temas: | |
Acceso en línea: | Texto completo |
Sumario: | The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG. |
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Descripción Física: | 1 online resource (xxiii, 1149 pages .). |
Bibliografía: | Includes bibliographical references and indexes. |
ISBN: | 3038260053 9783038260059 |