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Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /

The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commerc...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: European Conference on Silicon Carbide and Related Materials St. Petersburg, Russia
Otros Autores: Lebedev, Alexander A. (Editor ), Davydov, Sergey Uu (Editor ), Ivanov, Pavel A. (Editor ), Levinshtein, Mikhail E. (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Durnten-Zurich, Switzerland : Trans Tech Publications, [2013]
Colección:Materials science forum ; v. 740-742.
Temas:
Acceso en línea:Texto completo
Descripción
Sumario:The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.
Descripción Física:1 online resource (xxiii, 1149 pages .).
Bibliografía:Includes bibliographical references and indexes.
ISBN:3038260053
9783038260059