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|z (OCoLC)853362756
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|a TK7801 .W67 2013
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|a TEC
|x 008060
|2 bisacsh
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|a 621.381
|2 23
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|a UAMI
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|a Workshop on Frontiers in Electronics
|d (2009 :
|c Rincn̤, P.R.)
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245 |
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|a Frontiers in electronics :
|b proceedings of the WOFE-09, Rincon, Puerto-Rico, 13-16 December 2009 /
|c edited by Sorin Cristoloveanu & Michael Shur.
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|a Singapore ;
|a London :
|b World Scientific,
|c 2012.
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|a 1 online resource (1 volume) :
|b illustrations (some color)
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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490 |
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|a Selected Topics in Electronics and Systems ;
|v v. 52
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504 |
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|a Includes bibliographical references.
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|a Preface; Advanced Terahertz and Photonics Devices; Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I.C. Ho and X.C. Zhang; 1. Introduction; 2. The Mechanism of THz Generation and Detection in Gas; 3. THz Wave Generation and Detection in Different Gases; 4. THz Remote Generation and Detection; 5. Coherent Control of THz Generation; 6. Conclusion; Acknowledgement; References; How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari.
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|a 1. Introduction2. Material and Methods; 3. Experimental; 4. Discussion; 5. Conclusions; Acknowledgments; References; Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy; 1. Introduction; 2. Plasma Wave Detectors; 3. FinFET Structure; 4. Response Measurements; 5. Noise Equivalent Power; 6. Conclusion; Acknowledgments; References.
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|a 3. The Concept of WDM Demultiplexing with SPPs4. Summary; Acknowledgment; References; Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs; Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C.D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher; 1. Introduction; 2. Noise Generating Defects in High-k Gate Stacks; 2.1. Analysis of Random Telegraph Signal Noise (RTN); 2.2. Extracting defect characteristics; 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown.
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|a 3.1. Physical evidences of O-vacancies in IL3.2. Defects identification; 4. Vfb Roll-Off Phenomenon; 4.1. Roll-off mechanism; 4.2. Generation of positively charged defects; 4.3. Origin of R-O defects and R-O suppression; References; Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu; 1. Introduction; 2. Series Resistance Reduction; 3. High-K Dielectrics; 4. Metal Gate.
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|a Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
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590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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650 |
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|a Electronics
|v Congresses.
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650 |
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6 |
|a Électronique
|v Congrès.
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650 |
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7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Digital.
|2 bisacsh
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650 |
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7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Microelectronics.
|2 bisacsh
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650 |
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|a Electronics
|2 fast
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655 |
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7 |
|a Conference papers and proceedings
|2 fast
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700 |
1 |
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|a Cristoloveanu, Sorin.
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700 |
1 |
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|a Shur, Michael.
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776 |
0 |
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|c Hardback
|z 9789814383714
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830 |
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|a Selected topics in electronics and systems ;
|v v. 52.
|
856 |
4 |
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