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Silicon Carbide and Related Materials 2011 : Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA /
The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III n...
| Clasificación: | Libro Electrónico |
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| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Switzerland :
Trans Tech Publications Ltd,
2012.
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| Colección: | Materials science forum ;
v. 717-720. |
| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted. |
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| Descripción Física: | 1 online resource (1500 pages) : illustrations. |
| Bibliografía: | Includes bibliographical references and index. |
| ISBN: | 9783038138334 3038138339 |