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130509s1999 si a ob 001 0 eng d |
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|a 853361940
|a 1086537761
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|a 9789812817228
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|b .M247 1999eb
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|a SCI
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|a UAMI
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|a Marín, C.
|q (Carlos),
|d 1970-
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|a Orientation of single crystals by back-reflection Laue pattern simulation /
|c C. Marín & E. Diéguez.
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|a Singapore ;
|a River Edge, N.J. :
|b World Scientific,
|c ©1999.
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|a 1 online resource (xiii, 164 pages) :
|b illustrations
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
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|2 rdacarrier
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|a Some online versions lack accompanying media packaged with the printed version.
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|a Includes bibliographical references (pages 159-161) and index.
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|a Print version record.
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|a NOTE FROM AUTHORS; PREFACE; CONTENTS; CHAPTER 1 X-RAY DIFFRACTION BY CRYSTAL LATTICES; 1.1 Production of X-rays; 1.2 Detection of X-rays; 1.3 Crystal geometry; 1.3.1 Classification of crystallographic systems; 1.3.2 Miller indices and the reciprocal lattice; 1.4 Scattering by an atom; 1.5 Diffraction by lattices and the Bragg law; CHAPTER 2 BACK-REFLECTION LAUE TECHNIQUE; 2.1 Geometry of the back-reflection Laue technique; 2.2 Applications of the back-reflection Laue technique; 2.3 Factors which determine the diffraction intensities in the back-reflection Laue patterns.
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|a 2.3.1 Incident radiation2.3.2 Film detector; 2.3.3 Structure factor (F); 2.3.4 Temperature factor; 2.3.5 Anomalous dispersion; 2.3.6 Polarization factor; 2.3.7 Absorption factor; 2.3.8 Lorentz factor; CHAPTER 3 DEVELOPMENT OF THE COMPUTATIONAL PROCEDURES FOR THE SIMULATION AND INDEXING OF BACK-REFLECTION LAUE PATTERNS; 3.1 Geometrical simulation procedure; 3.2 Estimation of intensities procedure; 3.2.1 Procedure for the estimation of intensities; 3.2.2 Results and comments about the estimation of intensities.
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|a 3.2.2.a Comparison between the simulation of back-reflection patterns with and without estimation of intensities3.2.2.b Filtering amd characteristic limes effects; 3.2.2.c Exposure time effects; 3.2.2. d Film detector effects; 3.2.2.e Distinction of anisotropic orientations; 3.3 Indexing method; 3.3.1 Indexing procedure; 3.3.2 Indexing result; 3.3.3 Strategy for the indexing work; CHAPTER 4 PROGRAMMING AND USE OF THE SUPPLIED SOFTWARE; 4.1 Code development; 4.2 Hardware specifications and installation procedure; 4.3 User manual; 4.3.1 Input of the geometrical data; 4.3.2 Selection of the job.
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|a 4.3.3 Simulation4.3.4 Indexing; CHAPTER 5 COMPARISON AND DISCUSSION BETWEEN SIMULATED AND EXPERIMENTAL PATTERNS OF SAMPLES OF THE SEVEN CRYSTAL LATTICE; 5.1 Cubic: GaSb; 5.2 Tetragonal: KH2PO4; 5.3 Orthorhombic: KTiOPO4; 5.4 Monoclinic: (CH2NH2COOH)3H2SO4; 5.5 Hexagonal: ZnO; 5.6 Rhombohedral: LiNbO3; 5.7 Triclinic: Na2W4O13; APPENDICES; A1 The 230 Space Groups; A2 Crystal structures data; LIST OF SYMBOLS; REFERENCES; SUBJECT INDEX.
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|a Laue-grams are the easiest X-ray diffraction patterns that can be obtained and are very useful for orienting single crystals and finding out the symmetry of a projection. Despite the simplicity of the experimental equipment, the orientation work is a costly and time consuming process. It would be a great advantage to be able to simulate any kind of Laue-gram and to identify an unknown crystal orientation, including anisotropic ones. This book presents the complete numerical algorithms for simulation of X-ray back-reflection Laue-grams by evaluating the main factors that affect the intensities o.
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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|a X-ray crystallography.
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|a Crystallography, X-Ray
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|a Radiocristallographie.
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|a SCIENCE
|x Physics
|x Crystallography.
|2 bisacsh
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|a X-ray crystallography
|2 fast
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|a Computersimulation
|2 gnd
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|a Kristallorientierung
|2 gnd
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|a Laue-Diagramm
|2 gnd
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|a Laue-Verfahren
|2 gnd
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|a Röntgenstrukturanalyse
|2 gnd
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|a Diéguez, E.
|q (Ernesto)
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|i Print version:
|a Marín, C. (Carlos), 1970-
|t Orientation of single crystals by back-reflection Laue pattern simulation.
|d Singapore ; River Edge, N.J. : World Scientific, ©1999
|z 9810228716
|w (DLC) 98054444
|w (OCoLC)40545400
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