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Germanium : properties, production and applications /
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Science Publishers,
[2012]
|
| Colección: | Chemical engineering methods and technology.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS ; GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS ; CONTENTS ; PREFACE ; DEFECTS IN GERMANIUM: THEORETICAL ASPECTS; 1. Introduction; 2. Techniquesforidentificationofdefectsingermanium; 2.1. Theoreticalmethods; 2.1.1. Densityfunctionaltheory; 2.1.2. Boundaryconditions:clustersandsupercells; 2.1.3. Tacklingthebandgapproblem; 2.1.4. Calculationofobservables; 2.2. Experimentalmethods; 3. Intrinsicdefects; 3.1. Theself-interstitial; 3.1.1. Structureandenergetics; 3.1.2. Ionizationlevels; 3.1.3. Diffusion; 3.2. Thevacancy; 3.2.1. Geometryandelectronicstructure.
- 3.2.2. Formationenergies3.3. Thedivacancy; 3.4. Furthervacancyclustering; 4. Oxygen; 4.1. Interstitialoxygen; 4.2. Oxygendimer; 4.3.Complexesofself-interstitialswithoxygen; 4.4. Thermaldonors; 4.4.1. Earlystateaggregation; 4.4.2. AtomicStructureofTDD's; 4.4.3. Electronicstructuremodel; 4.4.4. Furtherobservables; 4.5. Thevacancy-oxygencomplex(Acenter); 4.5.1. Structureandvibrationalmodes; 4.5.2. Ionizationlevels; 4.6. Formation:ametastableVOprecursor; 4.6.1. Annealing; 4.7. Vacancy-di-oxygen(VO2)defects; 4.7.1. Structure; 4.7.2. Ionizationlevels; 4.7.3. Localvibrationalmodes; 5. Hydrogen.
- 5.1. Isolatedinterstitialhydrogen5.1.1. Geometry; 5.1.2. Localvibrationalmodes; 5.1.3. Ionizationlevels; 5.2. Hydrogendimer; 5.3. Interactionofhydrogenwithotherdefects; 5.4. Vacancy-hydrogen(VmHn)complexes; 5.5. Hydrogen-inducedplatelets; 6. Shallowdopantsandrelateddefects; 6.1. Boron; 6.2. InterstitialBoron; 6.2.1. Geometry; 6.2.2. Ionizationlevels; 6.3. Borondiffusion; 6.3.1. Othergroup-IIIacceptors; 6.4. Group-Vdonors; 6.5. Donor-vacancycomplexes(E-centers); 6.5.1. Structuregeometry; 6.5.2. Ionizationlevels; 6.5.3. Diffusion; 6.6. Furtherdonor-vacancyaggregation; 6.7. InterstitialPhosphorus.
- 6.8. Diffusionofgroup-Vdonors6.8.1. Influenceofthecarboncontent; 7. Metals; 7.1. Substitutional(Ms); 7.2. InteractionbetweenMsandvacancies(Ms-V); 7.3. Self-interstitial-metalcomplexes(I-Ms); 7.4. Interstitialmetals(Mi); 7.5. Substitutional-Interstitialpairs(Ms-Mi); 8. OtherImpurities; 8.1. Carbon; 8.2. Nitrogen; 8.3. Chalcogens; 9. Differencesbetweendefectsinsiliconandgermanium; 10. Conclusionandoutlook; References; ADefectssignatures:Experimentvs. First-Principlescalculations; PROPERTIES AND GENERATION BY IRRADIATION OF GERMANIUM POINT DEFECTS IN GE-DOPED SILICA ; ABSTRACT ; 1. INTRODUCTION.
- 1.1. SiO2,GeO2 and GeO2-SiO2 Glasses 1.2. Point Defects; 1.3. Photosensitivity and Second Harmonic Generation ; 1.4. Oxygen Deficiency ; 1.4.1. The Oxygen Mono Vacancy ; 1.4.2. Germanium Lone Pair Center (GLPC) ; 1.5. Radiation Effects ; 1.6. Structural Models of the Paramagnetic Point Defects ; 1.7. H(II) Paramagnetic Point Defects ; 1.8. Radiation Induced Absorption Bands ; 1.9. Generation Mechanisms ; 2. MATERIALS ; 2.1. Sol-Gel Preparation Technique ; 2.2. Plasma-Activated Chemical Vapour Deposition ; 2.3. Samples ; 3. GENERATION OF GE PARAMAGNETIC POINT DEFECTS.