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Advanced device modeling and simulation /
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulat...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New Jersey ; London :
World Scientific,
©2003.
|
| Colección: | Selected topics in electronics and systems ;
v. 31. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Advanced device modeling and simulation / |c editor T. Grasser. |
| 260 | |a New Jersey ; |a London : |b World Scientific, |c ©2003. | ||
| 300 | |a 1 online resource (1 volume). | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 31 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a INTRODUCTION; CONTENTS; MODELING ELECTRON TRANSPORT IN MOSFET DEVICES:EVOLUTION AND STATE OF THE ART; 1. Introduction; 2. A Brief History of Conventional Device Modeling; 3. Quantum Mechanical Modeling; 3.1. Models Based on Quantum Corrections: Macroscopic Models; 3.2. One-Dimensional and Quasi-Two-Dimensional Quantum Modeling; 3.3. Full Quantum Modeling: Microscopic Models; 4. Conclusions; Acknowledgments; References; PARTICLE MODELS FOR DEVICE SIMULATION; 1. Introduction; 2. The Numerical Monte Carlo Method; 2.1. General Scheme; 2.2. Monte Carlo Integration; 2.3. Integral Equations. | |
| 505 | 8 | |a 3. The Transient Boltzmann Equation3.1. Transient MC Algorithms; 3.2. Integral Form of the Boltzmann Equation; 3.3. The Ensemble MC Method; 3.4. The Weighted EMC Method; 3.5. The Backward MC Method; 4. The Stationary Boltzmann Equation; 4.1. Stationary MC Algorithms; 4.2. Integral Form of the Stationary Boltzmann Equation; 4.3. The Single-Particle MC Method; 4.3.1. The Synchronous Ensemble Method; 4.3.2. The Time Averaging Method; 4.3.3. MC Evaluation of the Iteration Series; 4.3.4. Normalization of the Distribution Function; 4.4. The Weighted Single-Particle MC Method. | |
| 505 | 8 | |a 4.4.1. Modified Probabilities4.4.2. Evolution of the Weights; 4.4.3. Results and Discussions; 4.5. The Single-Particle Backward MC Algorithm; 5. Small-Signal MC Algorithms; 6. The Stationary Wigner-Boltzmann Equation; 6.1. The Particle Model; 6.2. Stationary MC Method; 7. Conclusions; Acknowledgment; References; EFFECTIVE POTENTIALS AND QUANTUM FLUID MODELS:A THERMODYNAMIC APPROACH; 1. Introduction; Effective Potential Approaches; Quantum Fluid Models; 2. Quantum Kinetic Equations; 3. Moment Closures and Effective Potentials; 3.1. Bohm Potentials; 3.2. Thermodynamic Approximations. | |
| 505 | 8 | |a Effective Potentials:Quantum Hydrodynamics:; 4. Thermodynamic Equilibrium; 5. Approximations to Thermal Equilibrium; 5.1. Semiclassical Approximations; 5.2. Born Approximation; 6. Effective Potentials and Particle Discretizations; 7. Quantum Hydrodynamics; 7.1. The Semiclassical Closure; 7.2. Smoothed Potential QHD Based on the Born Approximation; 8. Applications; 8.1. Effective Potentials in Short Channel MOSFETS; 8.2. Smooth QHD Simulation of the Resonant Tunneling Diode; 9. Conclusions; References. | |
| 505 | 8 | |a SELF-CONSISTENT MODELING OF MOSFET QUANTUM EFFECTS BY SOLVING THE SCHRODINGER AND BOLTZMANN SYSTEM OF EQUATIONS BOLTZMANN SYSTEM OF EQUATIONS1. Introduction; 2. Methodology; 2.1. Mathematical Model; 2.2. General Approach; 2.3. Schrödinger Equation; 2.4. Poisson, Semiclassical Boltzmann and Hole Continuity Equations; 2.5. Quantum Boltzmann Equation and Effective Quantum Potential; 3. Simulation Results; 4. Conclusions; Acknowledgment; References; HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES; 1. Introduction; 2. Fluctuations in the Steady-State; 3. Hydrodynamic Noise Modeling. | |
| 520 | |a Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Microelectronics. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 1 | |a Microelectronics |x Simulation methods. | |
| 650 | 2 | |a Miniaturization | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Microélectronique. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a microelectronics. |2 aat | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x General. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x Integrated. |2 bisacsh | |
| 650 | 7 | |a Microelectronics. |2 fast |0 (OCoLC)fst01019757 | |
| 650 | 7 | |a Semiconductors. |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Grasser, Tibor. | |
| 776 | 0 | 8 | |i Print version: |t Advanced device modeling and simulation. |d New Jersey ; London : World Scientific, ©2003 |z 9812386076 |w (OCoLC)59276446 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 31. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=514727 |z Texto completo |
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