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EBSCO_ocn834619237 |
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20231017213018.0 |
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|a 9781619429475
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|a 620.11
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|a UAMI
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|a Advances in materials science research.
|n Volume 14 /
|c edited by Maryann C. Wythers.
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| 260 |
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|a Hauppauge, N.Y. :
|b Nova Science ;
|a Lancaster :
|b Gazelle [distributor],
|c 2012.
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| 300 |
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|a 1 online resource (1 volume)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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|a Print version record.
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| 504 |
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|a Includes bibliographical references and index.
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|a ADVANCES IN MATERIALS SCIENCE RESEARCH VOLUME 14; ADVANCES IN MATERIALS SCIENCE RESEARCH VOLUME 14; CONTENTS ; PREFACE ; POLYBENZIMIDAZOLES: SYNTHESIS, CHARACTERIZATIONS AND APPLICATIONS IN FORM OF MEMBRANES ; ABSTRACT ; NOMENCLATURE ; 1. INTRODUCTION ; 2. POLYMER SYNTHESIS ; 2.1. Synthesis ; 2.1.1. Heterogeneous Molten/Solid State Synthesis ; 2.1.2. Homogeneous Solution Synthesis ; 2.2. Characterizations ; 2.2.1. SEC and Mark-Houwink equation; 2.2.2. TGA and Thermal Stability ; 2.2.3. Spectroscopy ; 2.3. PBI Variants by Mainchain Modifications ; 2.3.1. Para PBI.
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| 505 |
8 |
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|a 2.3.2. Pyridine-Based PBI2.3.3. AB-PBI ; 2.3.4. Other Modifications of Main Chains; 2.4. Post-Polymerization N-Substitution ; 3. MEMBRANE FABRICATION ; 3.1. Solvents ; 3.2. Membrane Casting ; 3.2.1. Membrane Casting from DMAc Solutions ; 3.2.2. Membrane Casting from Acid Solutions ; 3.2.3. Membrane Casting from Alkaline Solution ; 3.3. Membrane Modifications ; 3.3.1. Ionic Cross-Linking ; 3.3.2. Covalent Cross-Linking ; 3.3.3. Sulfonated PBI ; 3.3.4. Composite Membranes ; 4. MEMBRANE PROPERTIES ; 4.1. Water Uptake and Acid Doping with Liquid Acids ; 4.2. Proton Conductivity.
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| 505 |
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|a 4.3. Electro-Osmotic Water Drag and Methanol Crossover 4.4. Gas Permeability ; 4.5. Mechanical Properties ; 4.6. Oxidative Degradation; 4.6.1. Thermal Oxidation ; 4.6.2. Peroxide Oxidation ; 5. APPLICATIONS OF PBI MEMBRANE ; CONCLUSION ; ACKNOWLEDGMENTS ; REFERENCES ; N-TYPE DOPING OF DIAMOND SEMICONDUCTOR; ABSTRACT ; INTRODUCTION ; ELECTRONIC PROPERTIES AND TYPES OF DIAMOND ; 1. Basic Properties of Diamond ; 2. Types of Diamond ; 3. Doping Methods ; 3.1. Ion Implantation ; 3.2. CVD Growth ; DONOR IMPURITIES DOPING DIAMOND ; 1. Doping of Single Element.
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| 505 |
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|a 1.1. IA Group Element (Li, Na) Doping 1.2. VA Group Element (N, P, As) Doping ; a) N-doping ; b) P-Doping ; c) As-Doping ; 1.3. VIA Group Element (O, S) Doping ; a) O-Doping ; b) S-doping ; 1.4. IIA and VIIIA Group Element (Be, Mg, F, Cl, Br, I) Doping ; 2. Codoping of Dopants in Diamond (N-B-N, N-Al-N, N-Si4, N-O, B-S) ; 3. Influence of Hydrogen and Vacancy Defect on Donor Impurities in Diamond ; CONVERSION OF P-TYPE CONDUCTIVITY TO N-TYPE CONDUCTIVITY ; CONCLUSION ; ACKNOWLEDGMENTS ; REFERENCES ; TRANSPARENT CONDUCTING OXIDES: SELECTED MATERIALS FOR THIN FILM SOLAR CELLS ; ABSTRACT.
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|a 1. INTRODUCTIONReferences ; 2. TRANSPARENT CONDUCTING OXIDES EVALUATION ; 2.1. First Approach: Electrical and Optical Properties ; 2.2. Going a Step Further: Chemical and Physical Stabilitiy Concerns ; References ; 3. TRANSPARENT CONDUCTING OXIDES: PHYSICS RELATED TO PERFORMANCE; 3.1. Structural Aspects ; 3.1.1. Stoichiometry ; 3.1.2. Grain Size ; 3.1.3. Surface States ; 3.1.4. Grain Boundaries and Grain Growth Orientation ; 3.1.5. Energy Band Profiles ; 3.1.6. Impurities ; 3.1.7. Dislocations ; 3.1.8. Interface States ; References ; 3.2. Optical Properties ; References.
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| 590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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| 650 |
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0 |
|a Materials science
|x Research.
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| 650 |
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6 |
|a Science des matériaux
|x Recherche.
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| 650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Material Science.
|2 bisacsh
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| 650 |
|
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|a Materials science
|x Research
|2 fast
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| 700 |
1 |
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|a Wythers, Maryann C.
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| 776 |
0 |
8 |
|i Print version:
|t Advances in materials science research. Volume 14.
|d Hauppauge, N.Y. : Nova Science ; Lancaster : Gazelle [distributor], 2012
|z 9781619429376
|w (OCoLC)784580195
|
| 856 |
4 |
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|u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=541117
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|a ProQuest Ebook Central
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