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Ferroelectrics : new research /
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Science Publishers, Inc,
©2012.
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| Colección: | Electrical engineering developments series.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- ""FERROELECTRICS NEW RESEARCH ""; ""FERROELECTRICS NEW RESEARCH ""; ""CONTENTS ""; ""PREFACE ""; ""APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR ""; ""ABSTRACT ""; ""1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR ""; ""Retention ""; ""Leakage Current ""; ""Depolarization Field""; ""Disturbance ""; ""2. STUDY FOR FEFET ""; ""2.1. Improvement of Ferroelectric Materials for MFIS FeFET ""; ""2.1.1. Photochemical Metal-Organic Deposition (PMOD) ""; ""2.1.1.1. Application of PMOD to the Formation of PZT Thin Films""
- ""2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films """"2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) ""; ""2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films ""; ""2.1.3. Composition Control in the Chemical Solution Process ""; ""2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films ""; ""2.1.4. The Effect of Film Thickness and Annealing Temperature ""; ""2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties ""
- ""2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure """"2.1.5. Element Substitution in Ferroelectric Materials ""; ""2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films ""; ""2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films ""; ""2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents ""; ""2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios ""
- ""2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ """"2.1.6. Ferroelectric Multilayer Structure""; ""2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films ""; ""2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films""; ""2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor ""; ""2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films ""
- ""2.2. Study on the Improvement of Retention Property in MFIS-FeFET """"2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET ""; ""2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET ""; ""CONCLUSION ""; ""REFERENCES ""; ""RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS ""; ""ABSTRACT""; ""1. INTRODUCTION ""; ""2. EXPERIMENTAL METHODS ""; ""2.1. Resonant Microwave Absorption Measurement (EPR Technique) ""; ""2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) ""; ""3. MULTIFERROIC MATERIALS STUDIES ""