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Thick films : properties, technology, and applications /
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Science Publishers,
[2012]
|
| Colección: | Materials science and technologies series.
Electrical engineering developments series. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | EBSCO_ocn832313462 | ||
| 003 | OCoLC | ||
| 005 | 20231017213018.0 | ||
| 006 | m o d | ||
| 007 | cr ||||||||||| | ||
| 008 | 110707s2012 nyu ob 001 0 eng | ||
| 010 | |a 2020676907 | ||
| 040 | |a DLC |b eng |e rda |c DLC |d N$T |d E7B |d OCLCF |d EBLCP |d DEBSZ |d AGLDB |d VTS |d STF |d AU@ |d M8D |d K6U |d YDXCP |d OCLCO |d VLY |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 923658062 |a 1162285248 | ||
| 020 | |a 9781614704010 |q ebook | ||
| 020 | |a 1614704015 | ||
| 020 | |z 9781614703846 |q hardcover : alk. paper | ||
| 020 | |z 1614703841 |q (hardcover ; |q alk. paper) | ||
| 029 | 1 | |a DEBSZ |b 472776991 | |
| 029 | 1 | |a DEBSZ |b 456598553 | |
| 029 | 1 | |a DEBBG |b BV043775240 | |
| 035 | |a (OCoLC)832313462 |z (OCoLC)923658062 |z (OCoLC)1162285248 | ||
| 050 | 0 | 0 | |a TK7871.15.F5 |
| 072 | 7 | |a TEC |x 007000 |2 bisacsh | |
| 082 | 0 | 0 | |a 621.3 |2 23 |
| 049 | |a UAMI | ||
| 245 | 0 | 0 | |a Thick films : |b properties, technology, and applications / |c Michael I. Panzin, editor. |
| 264 | 1 | |a New York : |b Nova Science Publishers, |c [2012] | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science and technologies | |
| 490 | 1 | |a Electrical engineering developments | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | |a Description based on print version record. | ||
| 505 | 0 | |a ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction "" | |
| 505 | 8 | |a ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction "" | |
| 505 | 8 | |a ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate "" | |
| 505 | 8 | |a ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth "" | |
| 505 | 8 | |a ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation "" | |
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Thick films. | |
| 650 | 0 | |a Electronics |x Materials. | |
| 650 | 6 | |a Couches épaisses (Électronique) | |
| 650 | 6 | |a Électronique |x Matériaux. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electrical. |2 bisacsh | |
| 650 | 7 | |a Electronics |x Materials |2 fast | |
| 650 | 7 | |a Thick films |2 fast | |
| 700 | 1 | |a Panzini, Michael I., |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Thick films |d New York : Nova Science Publishers, [2012] |z 9781614703846 (hardcover : alk. paper) |w (DLC) 2011022493 |
| 830 | 0 | |a Materials science and technologies series. | |
| 830 | 0 | |a Electrical engineering developments series. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=540163 |z Texto completo |
| 938 | |a YBP Library Services |b YANK |n 10251048 | ||
| 938 | |a EBSCOhost |b EBSC |n 540163 | ||
| 938 | |a ebrary |b EBRY |n ebr10659166 | ||
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL3018244 | ||
| 994 | |a 92 |b IZTAP | ||