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Advances in semiconductor lasers and applications to optoelectronics /
This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, NJ :
World Scientific,
©2000.
|
| Colección: | Selected topics in electronics and systems ;
v. 16. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Advances in semiconductor lasers and applications to optoelectronics / |c editors Mitra Dutta, Michael A. Stroscio. |
| 260 | |a Singapore ; |a River Edge, NJ : |b World Scientific, |c ©2000. | ||
| 300 | |a 1 online resource (xiii, 431 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 16 | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | 0 | |t Tunnel injection lasers / |r P. Bhattacharya -- |t Quantum well intersubband lasers / |r J.P. Sun [and others] -- |t Advances in measurements of physical parameters of semiconductor lasers / |r G.E. Shtengel [and others] -- |t Lateral injection lasers / |r E.H. Sargent and J.M. Xu -- |t Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- |t GaN-based laser diodes / |r M. Razeghi -- |t Quantum-dot semiconductor lasers / |r P. Bhattacharya -- |t Device characteristics of low-threshold quantum-dot lasers / |r A.E. Zhukov, V.M. Ustinov, and Z.I. Alferov -- |t Nitride lasers: optical gain and devise implications / |r A.V. Nurmikko and Y.K. Song -- |t Advanced concepts in intersubband unipolar lasers / |r J.P. Leburton, F.H. Julien, and Y. Lyanda-Geller -- |t Optoelectronic properties of strained wurtzite GaN quantum-well lasers / |r J. Wang [and others] -- |t Carrier capture in semiconductor quantum well lasers: a quantum transport analysis / |r L.F. Register -- |t Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers / |r E. Anemogiannis, E.N. Glytsis, and T.K. Gaylord -- |t Advanced semiconductor lasers: phonon engineering and phonon interactions / |r M. Dutta and M.A. Stroscio. |
| 588 | 0 | |a Print version record. | |
| 520 | |a This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers. As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductor lasers. | |
| 650 | 0 | |a Optoelectronic devices. | |
| 650 | 2 | |a Lasers, Semiconductor | |
| 650 | 6 | |a Lasers à semi-conducteurs. | |
| 650 | 6 | |a Dispositifs optoélectroniques. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Optoelectronic devices. |2 fast |0 (OCoLC)fst01046908 | |
| 650 | 7 | |a Semiconductor lasers. |2 fast |0 (OCoLC)fst01112170 | |
| 650 | 7 | |a Aufsatzsammlung |2 gnd | |
| 650 | 7 | |a Halbleiterlaser |2 gnd | |
| 650 | 7 | |a Lasers à semiconducteurs. |2 ram | |
| 650 | 7 | |a Dispositifs optoélectroniques. |2 ram | |
| 700 | 1 | |a Dutta, Mitra. | |
| 700 | 1 | |a Stroscio, Michael A., |d 1949- | |
| 776 | 0 | 8 | |i Print version: |t Advances in semiconductor lasers and applications to optoelectronics. |d Singapore ; River Edge, NJ : World Scientific, ©2000 |z 9810242573 |w (DLC) 2005297489 |w (OCoLC)45577332 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 16. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=519183 |z Texto completo |
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