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Silicon surfaces and formation of interfaces : basic science in the industrial world /
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, NJ :
World Scientific,
©2000.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Dabrowski, Jarek. | |
| 245 | 1 | 0 | |a Silicon surfaces and formation of interfaces : |b basic science in the industrial world / |c Jarek Dabrowski, Hans-Joachim Müssig. |
| 260 | |a Singapore ; |a River Edge, NJ : |b World Scientific, |c ©2000. | ||
| 300 | |a 1 online resource (xxiv, 550 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references (pages 463-506) and indexes. | ||
| 505 | 0 | 0 | |t The Silicon Age -- |t The omnipresent silicon -- |t The MOS technology -- |t Miniaturization -- |t Technological MOS processes -- |t Methods of Modern Surface Science -- |t Theoretical techniques -- |t Approximations in ab initio studies -- |t Convergency issues -- |t Tight-binding methods -- |t Experimental techniques -- |t Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- |t Atomic Force Microscope (AFM) -- |t Low Energy Electron Diffraction (LEED) -- |t Auger Electron Spectroscopy (AES) -- |t X-Ray Photoelectron Spectroscopy (XPS) -- |t Ultraviolet Photoelectron Spectroscopy (UPS) -- |t Absorption and Diffraction of X-Rays -- |t Ion Spectroscopies -- |t High Resolution Electron Energy Loss Spectroscopy (HREELS) -- |t Other Surface Science Techniques -- |t Silicon Surfaces and Interfaces -- |t Fundamental concepts -- |t Ideal Truncated bulk and surface energy -- |t Realistic clean surfaces -- |t Free surfaces -- |t Defects on the surface and in the bulk -- |t Adsorption and epitaxial growth -- |t Desorption, etching, cleaning, cleaving -- |t Buried interfaces -- |t Primary Silicon Surfaces and Their Vicinals -- |t Structures of Si(001) -- |t Structures of Si(111) -- |t Si(11n) surfaces -- |t Structures of Si(113) -- |t Structures of Si(110) -- |t The Famous Reconstruction of Si(001) -- |t Overview: expectations bias our predictions -- |t Pre-STM Era: Groping through the Dark -- |t Early observations and models -- |t The first idea: 2 [times] 1 order of dimers -- |t The first alternative and the first puzzle -- |t Dimers, chains, vacancies, or maybe something else? -- |t Soft phonons, double bonds, and rediscoveries. |
| 588 | 0 | |a Print version record. | |
| 520 | |a Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Silicon |x Surfaces. | |
| 650 | 0 | |a Surface chemistry. | |
| 650 | 6 | |a Silicium |x Surfaces. | |
| 650 | 6 | |a Chimie des surfaces. | |
| 650 | 7 | |a SCIENCE |x Chemistry |x Inorganic. |2 bisacsh | |
| 650 | 7 | |a Silicon |x Surfaces |2 fast | |
| 650 | 7 | |a Surface chemistry |2 fast | |
| 650 | 7 | |a Grenzfläche |2 gnd | |
| 650 | 7 | |a Oberfläche |2 gnd | |
| 650 | 7 | |a Silicium |2 gnd | |
| 700 | 1 | |a Müssig, Hans-Joachim. | |
| 776 | 0 | 8 | |i Print version: |a Dabrowski, Jarek. |t Silicon surfaces and formation of interfaces. |d Singapore ; River Edge, NJ : World Scientific, ©2000 |z 9810232861 |w (DLC) 99089210 |w (OCoLC)43063253 |
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