Silicides : fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 /

Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International School of Solid State Physics Erice, Italy
Otros Autores: Miglio, L., D'Heurle, F. M.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Singapore ; River Edge, NJ : World Scientific, ©2000.
Colección:Science and culture series (Singapore). Materials science ; 1.
Temas:
Silicides > Congresses.
Electronics > Materials > Congresses.
Integrated circuits > Congresses.
Thin films > Congresses.
Siliciures > Congrès.
Électronique > Matériaux > Congrès.
Circuits intégrés > Congrès.
Couches minces > Congrès.
SCIENCE > Chemistry > Inorganic.
Electronics > Materials
Integrated circuits
Silicides
Thin films
Kongress
Silicide
SILICIDES.
SILICON COMPOUNDS.
ELECTRONIC EQUIPMENT.
INTEGRATED CIRCUITS.
THIN FILMS.
CONFERENCES.
Conference papers and proceedings
Erice (1999)
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Crystal chemistry of metal silicides / R. Madar
  • Structural features of binary transition metal silicides / I. Engstrom
  • Bonding and polymorphism in transition metal disilicides / L. Miglio, M. Iannuzzi and D. Migas
  • Diffusion in silicides: basic approach and practical applications / P. Gas and F.M. d'Heurle
  • Silicides and thermodynamics / C. Bernard and A. Pisch
  • Optical properties of silicides: theory and experiment / V. Antonov and F. Marabelli
  • Electronic structure [symbol] / K. Goransson
  • Ion beam synthesized [symbol] precipitates in Si: structural characterization and origin of the 1.54 pm luminescence / M.G. Grimaldi, S. Coffa and C. Spinella
  • Optical characterization of [symbol] / W. Henrion [and others]
  • Fundamental electronic properties of semiconducting silicides / V. Borisenko
  • Semiconducting silicides
  • thermoelectric properties and applications / A. Heinrich
  • Metallic silicides / G. Ottaviani
  • Conversion electron Mossbauer spectroscopy study of iron disilicide / M. Fanciulli
  • The kinetics of reactive phase formation: silicides / F.M. d'Heurle
  • Reactive phase formation in binary and ternary silicide systems / A.A. Kodentsov [and others]
  • Epitaxial silicides / H. von Kanel
  • Ion bean synthesis, molecular beam allotaxy and self-assembled patterning of epitaxial silicides / S. Mantl
  • Silicides: materials science and applications for microelectronics / K. Maex and A. Lauwers
  • Mechanisms for enhanced formation of the C54 phase of titanium silicides / J.M.E. Harper [and others]
  • Titanium and tungsten silicides in silicon device technology / G. Queirolo
  • Micro-Raman spectroscopy applied to microelectronics: the phase transition of [symbol] from C49 to C54 / S. Quilici
  • Stresses in silicides thin films obtained by solid state reaction / P. Gergaud [and others]
  • The changing views on the Schottky barrier / R. Tung
  • Internal photoemission spectroscopy for a [symbol] Schottky junction / B. Asian and R. Turan
  • Metal rich structural silicides / A.J. Thorn [and others]
  • The epitaxy of [symbol] on Si substrates: a review / S.-L. Zhang and F.M. d'Heurle
  • Agglomeration of cobalt disilicide on silicon / A. Alberti, L. Kappius and F.M. d'Heurle.

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