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Silicides : fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 /
Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, NJ :
World Scientific,
©2000.
|
| Colección: | Science and culture series (Singapore). Materials science ;
1. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International School of Solid State Physics |n (16th : |d 1999 : |c Erice, Italy) | |
| 245 | 1 | 0 | |a Silicides : |b fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 / |c editors, Leo Miglio & Francois d'Heurle. |
| 246 | 3 | 0 | |a 16th Course of the International School of Solid State Physics |
| 246 | 1 | 8 | |a Silicides, fundamentals and applications |
| 260 | |a Singapore ; |a River Edge, NJ : |b World Scientific, |c ©2000. | ||
| 300 | |a 1 online resource (viii, 377 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a The science and culture series. Materials science ; |v 1 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Crystal chemistry of metal silicides / R. Madar -- Structural features of binary transition metal silicides / I. Engstrom -- Bonding and polymorphism in transition metal disilicides / L. Miglio, M. Iannuzzi and D. Migas -- Diffusion in silicides: basic approach and practical applications / P. Gas and F.M. d'Heurle -- Silicides and thermodynamics / C. Bernard and A. Pisch -- Optical properties of silicides: theory and experiment / V. Antonov and F. Marabelli -- Electronic structure [symbol] / K. Goransson -- Ion beam synthesized [symbol] precipitates in Si: structural characterization and origin of the 1.54 pm luminescence / M.G. Grimaldi, S. Coffa and C. Spinella -- Optical characterization of [symbol] / W. Henrion [and others] -- Fundamental electronic properties of semiconducting silicides / V. Borisenko -- Semiconducting silicides -- thermoelectric properties and applications / A. Heinrich -- Metallic silicides / G. Ottaviani -- Conversion electron Mossbauer spectroscopy study of iron disilicide / M. Fanciulli -- The kinetics of reactive phase formation: silicides / F.M. d'Heurle -- Reactive phase formation in binary and ternary silicide systems / A.A. Kodentsov [and others] -- Epitaxial silicides / H. von Kanel -- Ion bean synthesis, molecular beam allotaxy and self-assembled patterning of epitaxial silicides / S. Mantl -- Silicides: materials science and applications for microelectronics / K. Maex and A. Lauwers -- Mechanisms for enhanced formation of the C54 phase of titanium silicides / J.M.E. Harper [and others] -- Titanium and tungsten silicides in silicon device technology / G. Queirolo -- Micro-Raman spectroscopy applied to microelectronics: the phase transition of [symbol] from C49 to C54 / S. Quilici -- Stresses in silicides thin films obtained by solid state reaction / P. Gergaud [and others] -- The changing views on the Schottky barrier / R. Tung -- Internal photoemission spectroscopy for a [symbol] Schottky junction / B. Asian and R. Turan -- Metal rich structural silicides / A.J. Thorn [and others] -- The epitaxy of [symbol] on Si substrates: a review / S.-L. Zhang and F.M. d'Heurle -- Agglomeration of cobalt disilicide on silicon / A. Alberti, L. Kappius and F.M. d'Heurle. | |
| 520 | |a Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications. The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Silicides |v Congresses. | |
| 650 | 0 | |a Electronics |x Materials |v Congresses. | |
| 650 | 0 | |a Integrated circuits |v Congresses. | |
| 650 | 0 | |a Thin films |v Congresses. | |
| 650 | 6 | |a Siliciures |v Congrès. | |
| 650 | 6 | |a Électronique |x Matériaux |v Congrès. | |
| 650 | 6 | |a Circuits intégrés |v Congrès. | |
| 650 | 6 | |a Couches minces |v Congrès. | |
| 650 | 7 | |a SCIENCE |x Chemistry |x Inorganic. |2 bisacsh | |
| 650 | 7 | |a Electronics |x Materials |2 fast | |
| 650 | 7 | |a Integrated circuits |2 fast | |
| 650 | 7 | |a Silicides |2 fast | |
| 650 | 7 | |a Thin films |2 fast | |
| 650 | 7 | |a Kongress |2 gnd | |
| 650 | 7 | |a Silicide |2 gnd | |
| 650 | 7 | |a SILICIDES. |2 nasat | |
| 650 | 7 | |a SILICON COMPOUNDS. |2 nasat | |
| 650 | 7 | |a ELECTRONIC EQUIPMENT. |2 nasat | |
| 650 | 7 | |a INTEGRATED CIRCUITS. |2 nasat | |
| 650 | 7 | |a THIN FILMS. |2 nasat | |
| 650 | 7 | |a CONFERENCES. |2 nasat | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 655 | 7 | |a Erice (1999) |2 swd | |
| 700 | 1 | |a Miglio, L. | |
| 700 | 1 | |a D'Heurle, F. M. | |
| 776 | 0 | 8 | |i Print version: |a International School of Solid State Physics (16th : 1999 : Erice, Italy). |t Silicides. |d Singapore ; River Edge, NJ : World Scientific, ©2000 |z 9810244525 |w (DLC) 2001280362 |w (OCoLC)48642830 |
| 830 | 0 | |a Science and culture series (Singapore). |p Materials science ; |v 1. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=514223 |z Texto completo |
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