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Silicon and beyond : advanced device models and circuit simulators /

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and im...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Shur, Michael, Fjeldly, Tor A.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; River Edge, N.J. : World Scientific, ©2000.
Colección:Selected topics in electronics and systems ; vol. 15.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • PREFACE; CONTENTS; BSIM3V3 MOSFET MODEL; 1. Introduction; 2. I-V Model; 2.1. Vth model; 2.2. Bulk charge model; 2.3. Polysilicon gate depletion; 2.4. Single-equation channel charge model; 2.5. Mobility model; 2.6. Continuous linear current Ids0; 2.7. Saturation voltage; 2.8. Saturation drain current model; 2.9. Single-equation drain current formulation; 2.10. Substrate current model; 3. C-V Model
  • The Charge Thickness Model; 3.1. Accumulation region; 3.2. Depletion region; 3.3. Inversion region; 3.4. Channel charge partitioning and derivation of capacitance; 4. Non-Quasi Static Model.
  • 5. Junction Diode Model5.1. I-V model; 5.2. C-V model; 6. Temperature Effect; 7. Model Verification and Performance; 7.1. Parameter extraction; 7.2. DC test results; 7.3. C-V test results; 7.4. NQS model evaluation; 7.5. Model performance evaluation; 8. Summary; References; THIN-FILM TRANSISTOR MODELING; 1. Introduction; 2. Poly-Si TFT Modeling; 3. a-Si TFT Modeling; 3.1. DC model; 3.2. Dynamic TFT model; 4. Organic Thin Film Transistor Modeling; 5. Summary; References; SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES; 1. Introduction; 2. Unified FET Modeling; 2.1. Introduction.
  • 2.2. I-V modeling2.3. C-V modeling; 3. Modeling of GaAs MESFETs; 3.1. Introduction to GaAs FET modeling; 3.2. Series resistances; 3.3. Mobility; 3.4. Gate leakage current; 3.5. Additional effects and limitations; 3.6. Temperature dependencies; 3.7. Model verification; 4. HFET Modeling; 4.1. Introduction; 4.2. Equivalent circuit and DC model; 4.3. Gate leakage model; 4.4. Temperature dependencies; 4.5. Capacitance-voltage model; 4.6. Modeling of frequency dispersion effects; 4.7. HFET model verification; 5. Modeling of Heterodimensional Devices; 5.1. Introduction; 5.2. 2-D MESFET.
  • 5.3. Resonant tunneling diodes5.4. Resonant tunneling transistor; 5.5. 2-D MESFET/RTD logic element; 6. Wide-Bandgap Devices; 6.1. Models for wide bandgap semiconductors transistors; 7. Summary and Future Work; Acknowledgment; References; BEYOND SPICE, A REVIEW OF MODERN ANALOG CIRCUIT SIMULATION TECHNIQUES; 1. Introduction; 2. Circuit Simulation Techniques in the Time-Domain; 2.1. Introduction; 2.2. SPICE-type nonlinear simulation techniques revisited; 2.3. Beyond SPICE; 3. Circuit Simulation Techniques in the Frequency-Domain; 3.1. Introduction; 3.2. Harmonic balance method.
  • 3.3. The evolution of harmonic balance techniques3.4. Modern RF and microwave simulators; 4. Summary; References; THE SUPERCOMPUTER TOOLKIT AND ITS APPLICATIONS; 1. Introduction; 2. Hardware Architecture; 2.1. The microprocessor; 2.2. The memory-CPU board; 2.3. The connection of processors via the high-speed communication system; 2.4. Host-Toolkit boards communication; 3. Software; 3.1. User point of view; 3.2. System software; 3.3. Translators, simulators and other software tools; 4. Applications; 4.1. Elastic-plastic flow simulation; 4.2. Weather prediction; 4.3. Circuit simulation.